Literature DB >> 23512126

Effect of voltage polarity and amplitude on electroforming of TiO2 based memristive devices.

Hao Jiang1, Qiangfei Xia.   

Abstract

Pt/TiO2/Pt/Ti memristive devices were electrically formed to either the ON or OFF state using voltages of the same polarity but with different amplitudes. The forming step dictated the subsequent switching behaviour. A qualitative model based on the creation and migration of oxygen vacancies was proposed to explain the experimental results.

Entities:  

Year:  2013        PMID: 23512126     DOI: 10.1039/c3nr00622k

Source DB:  PubMed          Journal:  Nanoscale        ISSN: 2040-3364            Impact factor:   7.790


  1 in total

1.  Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor.

Authors:  Hao Jiang; Lili Han; Peng Lin; Zhongrui Wang; Moon Hyung Jang; Qing Wu; Mark Barnell; J Joshua Yang; Huolin L Xin; Qiangfei Xia
Journal:  Sci Rep       Date:  2016-06-23       Impact factor: 4.379

  1 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.