| Literature DB >> 23481834 |
Shahram Keyvaninia1, Gunther Roelkens, Dries Van Thourhout, Christophe Jany, Marco Lamponi, Alban Le Liepvre, Francois Lelarge, Dalila Make, Guang-Hua Duan, Damien Bordel, Jean-Marc Fedeli.
Abstract
A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a silicon ring resonator for wavelength selection and two silicon Bragg grating reflectors as back and front mirrors. Single wavelength operation with a side mode suppression ratio higher than 45 dB is obtained. An output power up to 10 mW at 20 °C and a thermo-optic wavelength tuning range of 8 nm are achieved. The laser linewidth is found to be 1.7 MHz.Entities:
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Year: 2013 PMID: 23481834 DOI: 10.1364/OE.21.003784
Source DB: PubMed Journal: Opt Express ISSN: 1094-4087 Impact factor: 3.894