| Literature DB >> 23473163 |
Brett C Johnson1, Bianca Haberl, Sarita Deshmukh, Brad D Malone, Marvin L Cohen, Jeffrey C McCallum, James S Williams, Jodie E Bradby.
Abstract
The formation of R8 germanium is reported. The β-Sn phase is first induced by the indentation of amorphous germanium (a-Ge) and the resultant phases on pressure release are characterized by Raman scattering. The expected Raman line frequencies for the various phases of Ge are determined from first-principles calculations using density functional perturbation theory of the zone-center phonons in the diamond, ST12, BC8, and R8 Ge phases. In addition to the R8 phase, traces of BC8 may also be present following pressure release.Entities:
Year: 2013 PMID: 23473163 DOI: 10.1103/PhysRevLett.110.085502
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161