Literature DB >> 23421267

Magnetic susceptibility of doped Si nanowhiskers.

A A Druzhinin1, I P Ostrovskii, Yu M Khoverko, Iu R Kogut, S I Nichkalo, J K Warchulska.   

Abstract

The present paper deals with studies of magnetic properties of Si(B) whiskers with large boron impurity concentration of up to 1-5% in the range of magnetic fields (0.3-4.0) kOe and temperatures of 4.2-300 K. In particular, magnetic susceptibility of whiskers has been investigated. The results obtained in the temperature range of 77-300 K have shown that magnetic susceptibility of whiskers substantially differs from that of bulk Si, which is revealed in the two significant peculiarities: (1) a substantial paramagnetic contribution into whisker magnetization and magnetic susceptibility; (2) a non-linear dependency of magnetization on magnetic field intensity. These facts indicate an existence of magnetic ordering in whiskers. The observed magnetization hysteresis at 4.2 K confirms the above supposition. Possible reasons of the observed effects have been discussed.

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Year:  2012        PMID: 23421267     DOI: 10.1166/jnn.2012.6804

Source DB:  PubMed          Journal:  J Nanosci Nanotechnol        ISSN: 1533-4880


  1 in total

1.  Nanoscale Conductive Channels in Silicon Whiskers with Nickel Impurity.

Authors:  Serhii Yatsukhnenko; Anatoly Druzhinin; Igor Ostrovskii; Yuriy Khoverko; Mukhajlo Chernetskiy
Journal:  Nanoscale Res Lett       Date:  2017-01-26       Impact factor: 4.703

  1 in total

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