Dispersion of electron-phonon resonances in one-layer graphene and its demonstration in micro-Raman scattering.

In the present work, we used Raman spectroscopy as sensitive tool for characterization of dispersion of electron-phonon resonances in one-layer graphene. We analyzed Stokes and anti-Stokes components of the Raman spectra to investigate the temperature dependence of the graphene G-band on the power of exciting radiation. Appearance and drastic intensity increase of zone-edge D-like modes caused by introduction of structural defects and/or deformations in the graphene layer were observed in the Raman spectra at high powers of excitation. We investigated phonon dispersion of one-layer graphene for iTO phonon branch at K point along K-M direction, which is involved in double-resonance Raman scattering. Raman dispersion slope of D-band is in good agreement with results of theoretical calculations based on the Green's functions approach based on the screened electron-electron interaction. Deviation of the experimental iTO phonon frequency from the linear dependence on excitation energy was observed at excitation E(exc) = 3.81 eV. Self-consistent classification of phonon states according to the symmetry for all dispersion branches of one-layer graphene was carried out.