Literature DB >> 23414526

Synthesis of patched or stacked graphene and hBN flakes: a route to hybrid structure discovery.

Soo Min Kim1, Allen Hsu, P T Araujo, Yi-Hsien Lee, Tomás Palacios, Mildred Dresselhaus, Juan-Carlos Idrobo, Ki Kang Kim, Jing Kong.   

Abstract

Two-dimensional (2D) materials such as graphene and hexagonal boron nitride (hBN) have attracted significant attention due to their remarkable properties. Numerous interesting graphene/hBN hybrid structures have been proposed but their implementation has been very limited. In this work, the synthesis of patched structures through consecutive chemical vapor deposition (CVD) on the same substrate was investigated. Both in-plane junctions and stacked layers were obtained. For stacked layers, depending on the synthesis sequence, in one case turbostratic stacking with random rotations were obtained. In another, "AA-like", slightly twisted stacking between graphene and hBN was observed with lattice orientation misalignment consistently to be <1°. Raman characterizations not only confirmed that hBN is a superior substrate but also revealed for the first time that a graphene edge with hBN passivation displays reduced D band intensity compared to an open edge. These studies pave the way for the proposed well-ordered graphene/hBN structures and outline exciting future directions for hybrid 2D materials.

Entities:  

Year:  2013        PMID: 23414526     DOI: 10.1021/nl303760m

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  12 in total

1.  Continuous growth of hexagonal graphene and boron nitride in-plane heterostructures by atmospheric pressure chemical vapor deposition.

Authors:  Gang Hee Han; Julio A Rodríguez-Manzo; Chan-Woo Lee; Nicholas J Kybert; Mitchell B Lerner; Zhengqing John Qi; Eric N Dattoli; Andrew M Rappe; Marija Drndic; A T Charlie Johnson
Journal:  ACS Nano       Date:  2013-11-13       Impact factor: 15.881

2.  Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructures.

Authors:  Teng Gao; Xiuju Song; Huiwen Du; Yufeng Nie; Yubin Chen; Qingqing Ji; Jingyu Sun; Yanlian Yang; Yanfeng Zhang; Zhongfan Liu
Journal:  Nat Commun       Date:  2015-04-14       Impact factor: 14.919

3.  Feature-rich magnetic quantization in sliding bilayer graphenes.

Authors:  Yao-Kung Huang; Szu-Chao Chen; Yen-Hung Ho; Chiun-Yan Lin; Ming-Fa Lin
Journal:  Sci Rep       Date:  2014-12-17       Impact factor: 4.379

4.  Controllable Synthesis of Graphene by Plasma-Enhanced Chemical Vapor Deposition and Its Related Applications.

Authors:  Menglin Li; Donghua Liu; Dacheng Wei; Xuefen Song; Dapeng Wei; Andrew Thye Shen Wee
Journal:  Adv Sci (Weinh)       Date:  2016-05-17       Impact factor: 16.806

5.  Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy.

Authors:  Guangyuan Lu; Tianru Wu; Peng Yang; Yingchao Yang; Zehua Jin; Weibing Chen; Shuai Jia; Haomin Wang; Guanhua Zhang; Julong Sun; Pulickel M Ajayan; Jun Lou; Xiaoming Xie; Mianheng Jiang
Journal:  Adv Sci (Weinh)       Date:  2017-05-19       Impact factor: 16.806

6.  Introducing Overlapping Grain Boundaries in Chemical Vapor Deposited Hexagonal Boron Nitride Monolayer Films.

Authors:  Bernhard C Bayer; Sabina Caneva; Timothy J Pennycook; Jani Kotakoski; Clemens Mangler; Stephan Hofmann; Jannik C Meyer
Journal:  ACS Nano       Date:  2017-04-24       Impact factor: 15.881

7.  Interface effects in hybrid hBN-graphene nanoribbons.

Authors:  Carlos Leon; Marcio Costa; Leonor Chico; Andrea Latgé
Journal:  Sci Rep       Date:  2019-03-05       Impact factor: 4.379

8.  Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition.

Authors:  Shujie Tang; Haomin Wang; Yu Zhang; Ang Li; Hong Xie; Xiaoyu Liu; Lianqing Liu; Tianxin Li; Fuqiang Huang; Xiaoming Xie; Mianheng Jiang
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

9.  In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy.

Authors:  Zheng Zuo; Zhongguang Xu; Renjing Zheng; Alireza Khanaki; Jian-Guo Zheng; Jianlin Liu
Journal:  Sci Rep       Date:  2015-10-07       Impact factor: 4.379

10.  Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure.

Authors:  Haikel Sediri; Debora Pierucci; Mahdi Hajlaoui; Hugo Henck; Gilles Patriarche; Yannick J Dappe; Sheng Yuan; Bérangère Toury; Rachid Belkhou; Mathieu G Silly; Fausto Sirotti; Mohamed Boutchich; Abdelkarim Ouerghi
Journal:  Sci Rep       Date:  2015-11-20       Impact factor: 4.379

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