Literature DB >> 23411441

Chemical 3D tomography of 28nm high K metal gate transistor: STEM XEDS experimental method and results.

K Lepinay1, F Lorut, R Pantel, T Epicier.   

Abstract

A new STEM XEDS tomography technique is proposed thanks to the implementation of multi EDX SDD detectors in analytical TEMs. The technique flow is presented and the first results obtained on a 28nm FDSOI transistor are detailed. The latter are compared with 2D XEDS analysis to demonstrate the interest of the slice extraction in all directions from a large analyzed volume without any 3D overlap effect issues.
Copyright © 2013 Elsevier Ltd. All rights reserved.

Entities:  

Year:  2013        PMID： 23411441     DOI： 10.1016/j.micron.2013.01.004

Source DB:  PubMed          Journal:  Micron        ISSN： 0968-4328            Impact factor:   2.251


  3 in total

1.  Electron tomography imaging methods with diffraction contrast for materials research.

Authors:  Satoshi Hata; Hiromitsu Furukawa; Takashi Gondo; Daisuke Hirakami; Noritaka Horii; Ken-Ichi Ikeda; Katsumi Kawamoto; Kosuke Kimura; Syo Matsumura; Masatoshi Mitsuhara; Hiroya Miyazaki; Shinsuke Miyazaki; Mitsu Mitsuhiro Murayama; Hideharu Nakashima; Hikaru Saito; Masashi Sakamoto; Shigeto Yamasaki
Journal:  Microscopy (Oxf)       Date:  2020-05-21       Impact factor: 1.571

2.  Obtaining 3D Chemical Maps by Energy Filtered Transmission Electron Microscopy Tomography.

Authors:  Lucian Roiban; Loïc Sorbier; Charles Hirlimann; Ovidiu Ersen
Journal:  J Vis Exp       Date:  2018-06-09       Impact factor: 1.355

3.  Energy Dispersive X-ray Tomography for 3D Elemental Mapping of Individual Nanoparticles.

Authors:  Thomas J A Slater; Edward A Lewis; Sarah J Haigh
Journal:  J Vis Exp       Date:  2016-07-05       Impact factor: 1.355
  3 in total

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