Literature DB >> 23410460

Electrostatic interaction in the presence of dielectric interfaces and polarization-induced like-charge attraction.

Zhenli Xu1.   

Abstract

Electrostatic polarization is important in many nano- and micro-scale physical systems such as colloidal suspensions, biopolymers, and nanomaterials assembly. The calculation of polarization potential requires an efficient algorithm for solving 3D Poisson's equation. We have developed a useful image charge method to rapid evaluation of the Green's function of the Poisson's equation in the presence of spherical dielectric discontinuities. This paper presents an extensive study of this method by giving a convergence analysis and developing a coarse-graining algorithm. The use of the coarse graining could reduce the number of image charges to around a dozen, by 1-2 orders of magnitude. We use the algorithm to investigate the interaction force between likely charged spheres in different dielectric environments. We find the size and charge asymmetry leads to an attraction between like charges, in agreement with existing results. Furthermore, we study three-body interactions and find, in the presence of an external interface, that the interaction force depends on the curvature of the interface and performs a nonmonotonic electrostatic force.

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Year:  2013        PMID: 23410460     DOI: 10.1103/PhysRevE.87.013307

Source DB:  PubMed          Journal:  Phys Rev E Stat Nonlin Soft Matter Phys        ISSN: 1539-3755


  4 in total

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Authors:  Eric B Lindgren; Benjamin Stamm; Yvon Maday; Elena Besley; A J Stace
Journal:  Philos Trans A Math Phys Eng Sci       Date:  2018-03-13       Impact factor: 4.226

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Authors:  Kirill A Emelyanenko; Alexandre M Emelyanenko; Ludmila B Boinovich
Journal:  Materials (Basel)       Date:  2016-03-08       Impact factor: 3.623

3.  Manipulating Interactions between Dielectric Particles with Electric Fields: A General Electrostatic Many-Body Framework.

Authors:  Muhammad Hassan; Connor Williamson; Joshua Baptiste; Stefanie Braun; Anthony J Stace; Elena Besley; Benjamin Stamm
Journal:  J Chem Theory Comput       Date:  2022-09-08       Impact factor: 6.578

4.  Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate.

Authors:  Kexiong Zhang; Hongwei Liang; Yang Liu; Rensheng Shen; Wenping Guo; Dongsheng Wang; Xiaochuan Xia; Pengcheng Tao; Chao Yang; Yingmin Luo; Guotong Du
Journal:  Sci Rep       Date:  2014-09-10       Impact factor: 4.379

  4 in total

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