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Literature DB >> 23386387

Structural and optoelectronic characterization of RF sputtered ZnSnN(2).

Lise Lahourcade¹, Naomi C Coronel, Kris T Delaney, Sujeet K Shukla, Nicola A Spaldin, Harry A Atwater.

Abstract

ZnSnN(2), a new earth-abundant semiconductor, is synthesized and characterized for use as a photovoltaic absorber material. Results confirm the predicted orthorhombic Pna2(1) crystal structure in RF sputtered thin films. Additionally, optical measurements reveal a direct bandgap of about 2 eV, which is larger than our calculated bandgap of 1.42 eV due to the Burstein-Moss effect.

Year: 2013 PMID： 23386387 DOI： 10.1002/adma.201204718

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

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Cited

5 in total

1. Domain formation and phase transitions in the wurtzite-based heterovalent ternaries: a Landau theory analysis.

Authors: Paul C Quayle
Journal: Acta Crystallogr A Found Adv Date: 2020-04-28 Impact factor: 2.290

2. Synthesis of a mixed-valent tin nitride and considerations of its possible crystal structures.

Authors: Christopher M Caskey; Aaron Holder; Sarah Shulda; Steven T Christensen; David Diercks; Craig P Schwartz; David Biagioni; Dennis Nordlund; Alon Kukliansky; Amir Natan; David Prendergast; Bernardo Orvananos; Wenhao Sun; Xiuwen Zhang; Gerbrand Ceder; David S Ginley; William Tumas; John D Perkins; Vladan Stevanovic; Svitlana Pylypenko; Stephan Lany; Ryan M Richards; Andriy Zakutayev
Journal: J Chem Phys Date: 2016-04-14 Impact factor: 3.488

Structural and optoelectronic characterization of RF sputtered ZnSnN(2).

1. Domain formation and phase transitions in the wurtzite-based heterovalent ternaries: a Landau theory analysis.

2. Synthesis of a mixed-valent tin nitride and considerations of its possible crystal structures.

3. Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis.

4. Growth of Epitaxial ZnSn_xGe_1-xN₂ Alloys by MBE.

5. Conduction-band effective mass and bandgap of ZnSnN₂ earth-abundant solar absorber.

Structural and optoelectronic characterization of RF sputtered ZnSnN(2).

1. Domain formation and phase transitions in the wurtzite-based heterovalent ternaries: a Landau theory analysis.

2. Synthesis of a mixed-valent tin nitride and considerations of its possible crystal structures.

3. Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis.

4. Growth of Epitaxial ZnSnxGe1-xN2 Alloys by MBE.

5. Conduction-band effective mass and bandgap of ZnSnN2 earth-abundant solar absorber.

4. Growth of Epitaxial ZnSn_xGe_1-xN₂ Alloys by MBE.

5. Conduction-band effective mass and bandgap of ZnSnN₂ earth-abundant solar absorber.