Literature DB >> 23386330

Nonvolatile analog memory transistor based on carbon nanotubes and C60 molecules.

Byungjin Cho1, Kyunghyun Kim, Chia-Ling Chen, Alex Ming Shen, Quyen Truong, Yong Chen.   

Abstract

A nonvolatile analog memory transistor is demonstrated by integrating C60 molecules as charge storage molecules in the transistor gate, and carbon nanotubes (CNTs) in the transistor channel. The currents through the CNT channel can be tuned quantitatively and reversibly to analog values by controlling the number of electrons trapped in the C60 molecules. After tuning, the electrons trapped in the C60 molecules in the gate, and the current through the CNT channel, can be preserved in a nonvolatile manner, indicating the characteristics of the nonvolatile analog memory.
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  C60; analog memory; carbon nanotubes; nonvolatile memory; transistors

Year:  2013        PMID: 23386330     DOI: 10.1002/smll.201202593

Source DB:  PubMed          Journal:  Small        ISSN: 1613-6810            Impact factor:   13.281


  1 in total

1.  Solution processed molecular floating gate for flexible flash memories.

Authors:  Ye Zhou; Su-Ting Han; Yan Yan; Long-Biao Huang; Li Zhou; Jing Huang; V A L Roy
Journal:  Sci Rep       Date:  2013-10-31       Impact factor: 4.379

  1 in total

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