| Literature DB >> 23368139 |
N Teneh1, A Yu Kuntsevich, V M Pudalov, M Reznikov.
Abstract
We report thermodynamic magnetization measurements of two-dimensional electrons in several high-mobility Si metal-oxide-semiconductor field-effect transistors. We provide evidence for an easily polarizable electron state in a wide density range from insulating to deep into the metallic phase. The temperature and magnetic field dependence of the magnetization is consistent with the formation of large-spin droplets in the insulating phase. These droplets melt in the metallic phase with increasing density and temperature, though they survive up to large densities.Entities:
Year: 2012 PMID: 23368139 DOI: 10.1103/PhysRevLett.109.226403
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161