| Literature DB >> 23341331 |
Zhongjie Xu1, Xin Guo, Mengyu Yao, Hongtao He, Lin Miao, Lu Jiao, Hongchao Liu, Jiannong Wang, Dong Qian, Jinfeng Jia, Wingkin Ho, Maohai Xie.
Abstract
A high-index topological insulator thin film, Bi2 Se3 (221), is grown on a faceted InP(001) substrate by molecular-beam epitaxy (see model in figure (a)). Angle-resolved photoemission spectroscopy measurement reveals the Dirac cone structure of the surface states on such a surface (figure (b)). The Fermi surface is elliptical (figure (c)), suggesting an anisotropy along different crystallographic directions. Transport studies also reveal a strong anisotropy in Hall conductance.Year: 2013 PMID： 23341331 DOI： 10.1002/adma.201202936
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849