Literature DB >> 23324430

Stable field emission from nanoporous silicon carbide.

Myung-Gyu Kang1, Henri J Lezec, Fred Sharifi.   

Abstract

We report on a new type of stable field emitter capable of electron emission at levels comparable to thermal sources. Such an emitter potentially enables significant advances in several important technologies which currently use thermal electron sources. These include communications through microwave electronics, and more notably imaging for medicine and security where new modalities of detection may arise due to variable-geometry x-ray sources. Stable emission of 6 A cm(-2) is demonstrated in a macroscopic array, and lifetime measurements indicate these new emitters are sufficiently robust to be considered for realistic implementation. The emitter is a monolithic structure, and is made in a room-temperature process. It is fabricated from a silicon carbide wafer, which is formed into a highly porous structure resembling an aerogel, and further patterned into an array. The emission properties may be tuned both through control of the nanoscale morphology and the macroscopic shape of the emitter array.

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Year:  2013        PMID: 23324430     DOI: 10.1088/0957-4484/24/6/065201

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  1 in total

1.  Extremely Stable Current Emission of P-Doped SiC Flexible Field Emitters.

Authors:  Shanliang Chen; Minghui Shang; Fengmei Gao; Lin Wang; Pengzhan Ying; Weiyou Yang; Xiaosheng Fang
Journal:  Adv Sci (Weinh)       Date:  2015-11-17       Impact factor: 16.806

  1 in total

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