| Literature DB >> 23289067 |
Chen Wang1, Shuangcheng Yu, Wei Chen, Cheng Sun.
Abstract
Recent advances in nanophotonic light trapping open up the new gateway to enhance the absorption of solar energy beyond the so called Yablonovitch Limit. It addresses the urgent needs in developing low cost thin-film solar photovoltaic technologies. However, current design strategy mainly relies on the parametric approach that is subject to the predefined topological design concepts based on physical intuition. Incapable of dealing with the topological variation severely constrains the design of optimal light trapping structure. Inspired by natural evolution process, here we report a design framework driven by topology optimization based on genetic algorithms to achieve a highly efficient light trapping structure. It has been demonstrated that the optimal light trapping structures obtained in this study exhibit more than 3-fold increase over the Yablonovitch Limit with the broadband absorption efficiency of 48.1%, beyond the reach of intuitive designs.Entities:
Year: 2013 PMID: 23289067 PMCID: PMC3535673 DOI: 10.1038/srep01025
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Light-trapping structure of the test case for optimization.
(a) The test structure consists of a 10 nm thick P3HT:PCBM active layer that is sandwiched between two 100 nm thick cladding layers made of high index material, and a nano-structured light scattering layer on top. The scattering layer has periodicity 600 nm. The material of the scattering layer is either air or a dielectric, which is GaP or polymer with refractive index 1.7, as two different test cases. (b) The unit cell of the real space scattering pattern discretized with meshes. Green corresponds to high-index dielectric material and white regions are air. (c) The cross-section view of the unit cell of the light trapping structure.
Figure 2Genetic algorithm based topology optimization for light-trapping structure design.
(a) The flowchart of Genetic Algorithm (GA) based topology optimization. 2D scattering pattern is represented with bit-array and rigorous coupled wave analysis (RCWA) is adopted to evaluate the absorption coefficient for each design. Designs are then optimized based on the corresponding absorption coefficients using GA that consists of selection, crossover, and mutation. The density filtering technique is utilized to treat numerical instabilities. (b) Schematic illustration of a typical operation of selection, crossover, and mutation of GA within one evolving iteration. An initial generation of 6 individual designs (1,1~6) with elements is first created. Each element is known as a gene in GA. Designs (1,2), (1,3), (1,4), (1,5) with superior performance are selected to form the mating pool, i.e. designs (2,1~6). While designs (1,2) and (1,5) have been selected twice respectively due to their outstanding performance and keeping population constant. Then three mating pairs are randomly picked from the mating pool and each pair generates two offsprings, i.e. ((2,1), (2,3)) ((3,1), (3,2)), ((2,2), (2,4)) (3,3), (3,4)), ((2,3), (2,6)) ((3,5), (3,6)), respectively. During the crossover, genes of a mating pair at the same loci switch with each other stochastically, such as the highlighted gene loci in designs (2,1) and (2,3), and result in the highlighted gene loci in designs (3,1) and (3,2). After the crossover, genes in each design may mutate to their opposite phase at a certain probability. Designs (4,1) and (4,6) are obtained from designs (3,1) and (3,6) respectively with mutations at the highlighted gene loci, while the rest designs remain the same.
Figure 3Results of the first optimization case, where the refractive index of the scattering dielectric material n = 1.7.
Unit cell and cells of the scattering pattern for three different wavelengths of incident light are shown with black and white denoting dielectric material and air, respectively. The Fourier transformation of the scattering patterns are calculated and two fundamental TM modes of the slot waveguide (1st TM mode: yellow and 2nd TM mode: blue) are plotted in Fourier space, indicating the mode coupling between incident light and guided modes in slot waveguide. (a) (b) (c) A typical scattering pattern in 1st generation of optimization. (d) (e) (f) Results of optimized scattering pattern for incident wavelength = 400 nm. (g) (h) (i) Results of optimized scattering pattern for incident wavelength = 400 nm. (j) (k) (l) Results of optimized scattering pattern for incident wavelength = 400 nm.
Absorption coefficient of 1st generation and optimized patterns for incident wavelength = 400 nm, 500 nm and 600 nm
| Targeted Wavelength (nm) | 400 | 500 | 600 |
|---|---|---|---|
| Average absorption coefficient of 1st generation | 0.012 | 0.011 | 0.016 |
| Absorption coefficient of the optimized pattern | 0.829 | 0.026 | 0.499 |
Figure 4Results of the second optimization case, where the refractive index of the dielectric material in the scattering layer n = 1.7.
Unit cell and cell of the scattering pattern for three different wavelengths of incident light are shown with black and white denoting dielectric material and air, respectively. The Fourier transformation of the scattering patterns are calculated and two fundamental TM modes of the slot waveguide (1st TM mode: yellow and 2nd TM mode: blue) are plotted in Fourier space, indicating the mode coupling between incident light and guided modes in slot waveguide. The absorption spectrum from 300 nm to 700 nm of the optimized scattering pattern is presented. The red and blue dash lines indicate the targeted wavelength and average absorption coefficient, respectively. (a) (b) (c) (d) Results of optimized scattering pattern for incident wavelength = 400 nm. (e) (f) (g) (h) Results of optimized scattering pattern for incident wavelength = 500 nm. (i) (j) (k) (l) Results of optimized scattering pattern for incident wavelength = 600 nm.
Absorption coefficient and enhancement factor of optimized patterns for = 400 nm, 500 nm and 600 nm
| Wavelength (nm) | 400 | 500 | 600 |
|---|---|---|---|
| Absorption coefficient | 0.964 | 0.985 | 0.991 |
| Enhancement factor | 39.61 | 50.67 | 60.78 |
Figure 5Results of optimal light trapping structure over the broad visible spectrum from 300 nm to 700 nm.
31 wavelengths evenly distributed in the spectrum are selected in this broadband optimization. (a) Unit cell of the optimized scattering pattern. (b) cell of the optimized scattering pattern. (c) Absorption spectrum of the optimized scattering pattern (blue solid line) and a typical random scattering pattern (red solid line). Blue and red dash line represents average absorption coefficient of the optimized scattering pattern and the random pattern, respectively.