| Literature DB >> 23263179 |
C Blömers1, T Rieger, P Zellekens, F Haas, M I Lepsa, H Hardtdegen, O Gül, N Demarina, D Grützmacher, H Lüth, Th Schäpers.
Abstract
We investigated the transport properties of GaAs/InAs core/shell nanowires grown by molecular beam epitaxy. Owing to the band alignment between GaAs and InAs, electrons are accumulated in the InAs shell as long as the shell thickness exceeds 12 nm. By performing simulations using a Schrödinger-Poisson solver, it is confirmed that confined states are present in the InAs shell, which are depleted if the shell thickness is below a threshold value. The existence of a tubular-shaped conductor is proved by performing magnetoconductance measurements at low temperatures. Here, flux periodic conductance oscillations are observed which can be attributed to transport in one-dimensional channels based on angular momentum states.Year: 2012 PMID: 23263179 DOI: 10.1088/0957-4484/24/3/035203
Source DB: PubMed Journal: Nanotechnology ISSN: 0957-4484 Impact factor: 3.874