Literature DB >> 23257999

Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga2S3 nanocrystals.

Jing Ren1, Bo Li, Guang Yang, Weina Xu, Zhihuan Zhang, Mihail Secu, Vasile Bercu, Huidan Zeng, Guorong Chen.   

Abstract

Upon 808 nm excitation, an intense broadband near-infrared emission from Cr4+ has been observed in 80GeS2-20Ga2S3 chalcogenide glass-ceramics (GCs) containing Ga2S3 nanocrystals. The emission band peaking at 1250 nm covers the O, E, S bands (1000-1500 nm). The formation of Ga2S3 nanocrystals (∼20  nm) increases the emission intensity of Cr4+ by more than three times. The quantum efficiency of the present GCs is as great as 36% at room temperature.

Entities:  

Year:  2012        PMID: 23257999     DOI: 10.1364/OL.37.005043

Source DB:  PubMed          Journal:  Opt Lett        ISSN: 0146-9592            Impact factor:   3.776


  2 in total

1.  Optically decomposed near-band-edge structure and excitonic transitions in Ga₂S₃.

Authors:  Ching-Hwa Ho; Hsin-Hung Chen
Journal:  Sci Rep       Date:  2014-08-21       Impact factor: 4.379

2.  Selective doping of Ni2+ in highly transparent glass-ceramics containing nano-spinels ZnGa2O4 and Zn1+x Ga2-2x Ge x O4 for broadband near-infrared fiber amplifiers.

Authors:  Zhigang Gao; Yinyao Liu; Jing Ren; Zaijin Fang; Xiaosong Lu; Elfed Lewis; Gerald Farrell; Jun Yang; Pengfei Wang
Journal:  Sci Rep       Date:  2017-05-11       Impact factor: 4.379

  2 in total

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