Literature DB >> 23235888

Tunable threshold resistive switching characteristics of Pt-Fe2O3 core-shell nanoparticle assembly by space charge effect.

Yoon-Jae Baek1, Quanli Hu, Jae Woo Yoo, Young Jin Choi, Chi Jung Kang, Hyun Ho Lee, Seok-Hong Min, Hyun-Mi Kim, Ki-Bum Kim, Tae-Sik Yoon.   

Abstract

Tunable threshold resistive switching characteristics of Pt-Fe(2)O(3) core-shell nanoparticle (NP) assembly were investigated. The colloidal Pt-Fe(2)O(3) core-shell NPs with a Pt core diameter of ∼3 nm and a total diameter of ∼15 nm were chemically synthesized by a one-step process. These NPs were assembled as a layer with a thickness of ∼80 nm by repeated dip-coating between Ti and Pt electrodes on a flexible polyethersulfone (PES) substrate. The Ti/NPs/Pt/PES structure exhibited the threshold switching, i.e. volatile transition from high to low resistance state at a high voltage and vice versa at a low voltage. The current-voltage measurements after charging and discharging NPs revealed that the resistance state and threshold switching voltage of the assembly could be tuned by the space charges stored in high density trap sites of Pt cores in Pt-Fe(2)O(3) core-shell NP assembly. These results demonstrated the possible tuning of threshold switching of core-shell NP assembly by the space charge effect, which can be potentially utilized for the tunable selection device element in nonvolatile memory circuits.

Entities:  

Year:  2012        PMID: 23235888     DOI: 10.1039/c2nr32886k

Source DB:  PubMed          Journal:  Nanoscale        ISSN: 2040-3364            Impact factor:   7.790


  5 in total

1.  Effect of Mn doping on electroforming and threshold voltages of bipolar resistive switching in Al/Mn : NiO/ITO.

Authors:  Ni-Na Ge; Chuan-Hui Gong; Xin-Cai Yuan; Hui-Zhong Zeng; Xian-Hua Wei
Journal:  RSC Adv       Date:  2018-08-20       Impact factor: 4.036

2.  Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions.

Authors:  Yi-Jen Huang; Shih-Chun Chao; Der-Hsien Lien; Cheng-Yen Wen; Jr-Hau He; Si-Chen Lee
Journal:  Sci Rep       Date:  2016-04-07       Impact factor: 4.379

3.  Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate.

Authors:  Yejoo Choi; Jaemin Shin; Seungjun Moon; Changhwan Shin
Journal:  Micromachines (Basel)       Date:  2020-05-21       Impact factor: 2.891

4.  Analog Memristive Characteristics of Square Shaped Lanthanum Oxide Nanoplates Layered Device.

Authors:  Wonkyu Kang; Kyoungmin Woo; Hyon Bin Na; Chi Jung Kang; Tae-Sik Yoon; Kyung Min Kim; Hyun Ho Lee
Journal:  Nanomaterials (Basel)       Date:  2021-02-09       Impact factor: 5.076

5.  Resistive Switching of Sub-10 nm TiO₂ Nanoparticle Self-Assembled Monolayers.

Authors:  Dirk Oliver Schmidt; Nicolas Raab; Michael Noyong; Venugopal Santhanam; Regina Dittmann; Ulrich Simon
Journal:  Nanomaterials (Basel)       Date:  2017-11-04       Impact factor: 5.076

  5 in total

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