Literature DB >> 23233330

Bandgap-graded CdS(x)Se(1-x) nanowires for high-performance field-effect transistors and solar cells.

Liang Li1, Hao Lu, Zongyin Yang, Limin Tong, Yoshio Bando, Dmitri Golberg.   

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Year:  2012        PMID： 23233330     DOI： 10.1002/adma.201204434

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


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  5 in total

1.  CdS-Nanowires Flexible Photo-detector with Ag-Nanowires Electrode Based on Non-transfer Process.

Authors:  Yanli Pei; Ruihan Pei; Xiaoci Liang; Yuhao Wang; Ling Liu; Haibiao Chen; Jun Liang
Journal:  Sci Rep       Date:  2016-02-22       Impact factor: 4.379

2.  Shape and composition control of Bi19S27(Br3-x ,I x ) alloyed nanowires: the role of metal ions.

Authors:  Yihui Wu; Huanhuan Pan; Xin Zhou; Mingrun Li; Bin Zhou; Chi Yang; Wen-Hua Zhang; Jiansheng Jie; Can Li
Journal:  Chem Sci       Date:  2015-05-13       Impact factor: 9.825

3.  Synthesis and characterization of CdS x Se1-x alloy quantum dots with composition-dependent band gaps and paramagnetic properties.

Authors:  Yueh-Chi Chung; Chien-Hsin Yang; Hao-Wen Zheng; Ping-Szu Tsai; Tzong-Liu Wang
Journal:  RSC Adv       Date:  2018-08-24       Impact factor: 3.361

Review 4.  Single-nanostructure bandgap engineering enabled by magnetic-pulling thermal evaporation growth.

Authors:  Jinyou Xu; Xingyu Wang; Richard Nötzel
Journal:  Nanoscale Adv       Date:  2020-08-07

5.  Ultrahigh photoconductivity of bandgap-graded CdSxSe1-x nanowires probed by terahertz spectroscopy.

Authors:  Hongwei Liu; Junpeng Lu; Zongyin Yang; Jinghua Teng; Lin Ke; Xinhai Zhang; Limin Tong; Chorng Haur Sow
Journal:  Sci Rep       Date:  2016-06-06       Impact factor: 4.379
  5 in total

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