| Literature DB >> 23215331 |
N T Son1, X T Trinh, L S Løvlie, B G Svensson, K Kawahara, J Suda, T Kimoto, T Umeda, J Isoya, T Makino, T Ohshima, E Janzén.
Abstract
Using electron paramagnetic resonance (EPR), energy levels of the carbon vacancy (V(C)) in 4H-SiC and its negative-U properties have been determined. Combining EPR and deep-level transient spectroscopy we show that the two most common defects in as-grown 4H-SiC--the Z(1/2) lifetime-limiting defect and the EH(7) deep defect--are related to the double acceptor (2-|0) and single donor (0|+) levels of V(C), respectively.Entities:
Year: 2012 PMID： 23215331 DOI： 10.1103/PhysRevLett.109.187603
Source DB: PubMed Journal: Phys Rev Lett ISSN： 0031-9007 Impact factor: 9.161