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Literature DB >> 23180424

Ion-irradiation-induced defects in isotopically-labeled two layered graphene: enhanced in-situ annealing of the damage.

Martin Kalbac¹, Ossi Lehtinen, Arkady V Krasheninnikov, Juhani Keinonen.

Abstract

Contrary to theoretical estimates based on the conventional binary collision model, experimental results indicate that the number of defects in the lower layer of the bi-layer graphene sample is smaller than in the upper layer. This observation is explained by in situ self-annealing of the defects.

Entities: Chemical

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Year: 2012 PMID： 23180424 DOI： 10.1002/adma.201203807

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

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Cited

11 in total

1. Toward Two-Dimensional All-Carbon Heterostructures via Ion Beam Patterning of Single-Layer Graphene.

Authors: Jani Kotakoski; Christian Brand; Yigal Lilach; Ori Cheshnovsky; Clemens Mangler; Markus Arndt; Jannik C Meyer
Journal: Nano Lett Date: 2015-07-24 Impact factor: 11.189

2. Mechanism of the defect formation in supported graphene by energetic heavy ion irradiation: the substrate effect.

Authors: Weisen Li; Xinwei Wang; Xitong Zhang; Shijun Zhao; Huiling Duan; Jianming Xue
Journal: Sci Rep Date: 2015-04-30 Impact factor: 4.379

3. Ultrafast electronic response of graphene to a strong and localized electric field.

Authors: Elisabeth Gruber; Richard A Wilhelm; Rémi Pétuya; Valerie Smejkal; Roland Kozubek; Anke Hierzenberger; Bernhard C Bayer; Iñigo Aldazabal; Andrey K Kazansky; Florian Libisch; Arkady V Krasheninnikov; Marika Schleberger; Stefan Facsko; Andrei G Borisov; Andrés Arnau; Friedrich Aumayr
Journal: Nat Commun Date: 2016-12-21 Impact factor: 14.919

4. Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation.

Authors: Filippo Giubileo; Antonio Di Bartolomeo; Nadia Martucciello; Francesco Romeo; Laura Iemmo; Paola Romano; Maurizio Passacantando
Journal: Nanomaterials (Basel) Date: 2016-11-10 Impact factor: 5.076

5. Seamless lateral graphene p-n junctions formed by selective in situ doping for high-performance photodetectors.

Authors: Gang Wang; Miao Zhang; Da Chen; Qinglei Guo; Xuefei Feng; Tianchao Niu; Xiaosong Liu; Ang Li; Jiawei Lai; Dong Sun; Zhimin Liao; Yongqiang Wang; Paul K Chu; Guqiao Ding; Xiaoming Xie; Zengfeng Di; Xi Wang
Journal: Nat Commun Date: 2018-12-05 Impact factor: 14.919

6. Atomistic Simulations of Defect Production in Monolayer and Bulk Hexagonal Boron Nitride under Low- and High-Fluence Ion Irradiation.

Authors: Sadegh Ghaderzadeh; Silvan Kretschmer; Mahdi Ghorbani-Asl; Gregor Hlawacek; Arkady V Krasheninnikov
Journal: Nanomaterials (Basel) Date: 2021-05-04 Impact factor: 5.076

Ion-irradiation-induced defects in isotopically-labeled two layered graphene: enhanced in-situ annealing of the damage.

1. Toward Two-Dimensional All-Carbon Heterostructures via Ion Beam Patterning of Single-Layer Graphene.

2. Mechanism of the defect formation in supported graphene by energetic heavy ion irradiation: the substrate effect.

3. Ultrafast electronic response of graphene to a strong and localized electric field.

4. Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation.

5. Seamless lateral graphene p-n junctions formed by selective in situ doping for high-performance photodetectors.

6. Atomistic Simulations of Defect Production in Monolayer and Bulk Hexagonal Boron Nitride under Low- and High-Fluence Ion Irradiation.

7. Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation.

8. Site-selective local fluorination of graphene induced by focused ion beam irradiation.

Review 9. Structure of graphene and its disorders: a review.

10. Crosslinking Multilayer Graphene by Gas Cluster Ion Bombardment.