Literature DB >> 23161780

Memory devices using a mixture of MoS₂ and graphene oxide as the active layer.

Zongyou Yin1, Zhiyuan Zeng, Juqing Liu, Qiyuan He, Peng Chen, Hua Zhang.   

Abstract

A mixed film consisting of 2D MoS₂ and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS₂ component in the MoS₂-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS₂-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤ 1.5 V) and high ON/OFF current ratio (≈ 10²).

Entities:  

Year:  2013        PMID： 23161780     DOI： 10.1002/smll.201201940

Source DB:  PubMed          Journal:  Small        ISSN： 1613-6810            Impact factor:   13.281


  6 in total

Review 1.  High-yield production of mono- or few-layer transition metal dichalcogenide nanosheets by an electrochemical lithium ion intercalation-based exfoliation method.

Authors:  Ruijie Yang; Liang Mei; Qingyong Zhang; Yingying Fan; Hyeon Suk Shin; Damien Voiry; Zhiyuan Zeng
Journal:  Nat Protoc       Date:  2022-01-12       Impact factor: 13.491

Review 2.  2D materials: increscent quantum flatland with immense potential for applications.

Authors:  Pranay Ranjan; Snehraj Gaur; Himanshu Yadav; Ajay B Urgunde; Vikas Singh; Avit Patel; Kusum Vishwakarma; Deepak Kalirawana; Ritu Gupta; Prashant Kumar
Journal:  Nano Converg       Date:  2022-06-06

Review 3.  Decade of 2D-materials-based RRAM devices: a review.

Authors:  Muhammad Muqeet Rehman; Hafiz Mohammad Mutee Ur Rehman; Jahan Zeb Gul; Woo Young Kim; Khasan S Karimov; Nisar Ahmed
Journal:  Sci Technol Adv Mater       Date:  2020-03-18       Impact factor: 8.090

4.  Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset.

Authors:  Muhammad Muqeet Rehman; Ghayas Uddin Siddiqui; Jahan Zeb Gul; Soo-Wan Kim; Jong Hwan Lim; Kyung Hyun Choi
Journal:  Sci Rep       Date:  2016-11-04       Impact factor: 4.379

5.  Work Function Tuning in Two-Dimensional MoS2 Field-Effect-Transistors with Graphene and Titanium Source-Drain Contacts.

Authors:  Seung Su Baik; Seongil Im; Hyoung Joon Choi
Journal:  Sci Rep       Date:  2017-03-30       Impact factor: 4.379

6.  Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer.

Authors:  Poh Choon Ooi; Muhammad Aniq Shazni Mohammad Haniff; M F Mohd Razip Wee; Boon Tong Goh; Chang Fu Dee; Mohd Ambri Mohamed; Burhanuddin Yeop Majlis
Journal:  Sci Rep       Date:  2019-05-01       Impact factor: 4.379
  6 in total

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