| Literature DB >> 23161521 |
Abd-Elrazek Haj-Yahia1, Omer Yaffe, Tatyana Bendikov, Hagai Cohen, Yishay Feldman, Ayelet Vilan, David Cahen.
Abstract
An eight-orders of magnitude enhancement in current across Hg/X-styrene-Si junctions is caused by merely altering a substituent, X. Interface states are passivated and, depending on X, the Si Schottky junction encompasses the full range from Ohmic to strongly rectifying. This powerful electrostatic molecular effect has immediate implications for interface band alignment and sensing.Entities:
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Year: 2012 PMID： 23161521 DOI： 10.1002/adma.201203028
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849