Literature DB >> 23157302

Multilevel conductance switching of memory device through photoelectric effect.

Changqing Ye1, Qian Peng, Mingzhu Li, Jia Luo, Zhengming Tang, Jian Pei, Jianming Chen, Zhigang Shuai, Lei Jiang, Yanlin Song.   

Abstract

A photoelectronic switch of a multilevel memory device has been achieved using a meta-conjugated donor-bridge-acceptor (DBA) molecule. Such a DBA optoelectronic molecule responds to both the optical and electrical stimuli. The device exhibits good electrical bistable switching behaviors under dark, with a large ON/OFF ratio more than 10(6). In cooperation with the UV light, photoelectronic ternary states are addressable in a bistable switching system. On the basis of the CV measurement, charge carriers transport modeling, quantum chemical calculation, and absorption spectra analysis, the mechanism of the DBA memory is suggested to be attributed to the substep charge transfer transition process. The capability of tailoring photoelectrical properties is a very promising strategy to explore the multilevel storage, and it will give a new opportunity for designing multifunctional devices.

Entities:  

Year:  2012        PMID: 23157302     DOI: 10.1021/ja305354y

Source DB:  PubMed          Journal:  J Am Chem Soc        ISSN: 0002-7863            Impact factor:   15.419


  6 in total

1.  Orthogonally modulated molecular transport junctions for resettable electronic logic gates.

Authors:  Fanben Meng; Yves-Marie Hervault; Qi Shao; Benhui Hu; Lucie Norel; Stéphane Rigaut; Xiaodong Chen
Journal:  Nat Commun       Date:  2014       Impact factor: 14.919

2.  Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method.

Authors:  Hee-Dong Kim; Min Ju Yun; Jae Hoon Lee; Kyoeng Heon Kim; Tae Geun Kim
Journal:  Sci Rep       Date:  2014-04-09       Impact factor: 4.379

3.  Tuning of resistive memory switching in electropolymerized metallopolymeric films.

Authors:  Bin-Bin Cui; Zupan Mao; Yuxia Chen; Yu-Wu Zhong; Gui Yu; Chuanlang Zhan; Jiannian Yao
Journal:  Chem Sci       Date:  2014-11-24       Impact factor: 9.825

4.  Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer.

Authors:  Yanmei Sun; Dianzhong Wen; Xuduo Bai; Junguo Lu; Chunpeng Ai
Journal:  Sci Rep       Date:  2017-06-21       Impact factor: 4.379

5.  Light-activated Multilevel Resistive Switching Storage in Pt/Cs2AgBiBr6/ITO/Glass Devices.

Authors:  Yongfu Qin; Tingting Zhong; Fengzhen Lv; Haijun Qin; Xuedong Tian
Journal:  Nanoscale Res Lett       Date:  2021-12-13       Impact factor: 4.703

6.  Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device.

Authors:  Fengzhen Lv; Tingting Zhong; Yongfu Qin; Haijun Qin; Wenfeng Wang; Fuchi Liu; Wenjie Kong
Journal:  Nanomaterials (Basel)       Date:  2021-05-21       Impact factor: 5.076

  6 in total

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