| Literature DB >> 23128524 |
Ji Hyun Lee1, Seung Chul Yew, Jinhan Cho, Youn Sang Kim.
Abstract
We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (~11 V) and relatively good endurance properties (~over 100 cycles).Entities:
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Year: 2012 PMID： 23128524 DOI： 10.1039/c2cc35959f
Source DB: PubMed Journal: Chem Commun (Camb) ISSN： 1359-7345 Impact factor: 6.222