Heterogeneous integration of InGaAs nanowires on the rear surface of Si solar cells for efficiency enhancement.

We demonstrate energy-conversion-efficiency (η) enhancement of silicon (Si) solar cells by the heterogeneous integration of an In(x)Ga(1-x)As nanowire (NW) array on the rear surface. The NWs are grown via a catalyst-free, self-assembled method on Si(111) substrates using metalorganic chemical vapor deposition (MOCVD). Heavily p-doped In(x)Ga(1-x)As (x ≈ 0.7) NW arrays are utilized as not only back-reflectors but also low bandgap rear-point-contacts of the Si solar cells. External quantum efficiency of the hybrid In(x)Ga(1-x)As NW-Si solar cell is increased over the entire solar response wavelength range; and η is enhanced by 36% in comparison to Si solar cells processed under the same condition without the NWs.