Literature DB >> 23126938

Dilation x-ray imager a new∕faster gated x-ray imager for the NIF.

S R Nagel1, T J Hilsabeck, P M Bell, D K Bradley, M J Ayers, M A Barrios, B Felker, R F Smith, G W Collins, O S Jones, J D Kilkenny, T Chung, K Piston, K S Raman, B Sammuli, J D Hares, A K L Dymoke-Bradshaw.   

Abstract

As the yield on implosion shots increases it is expected that the peak x-ray emission reduces to a duration with a FWHM as short as 20 ps for ∼7 × 10(18) neutron yield. However, the temporal resolution of currently used gated x-ray imagers on the NIF is 40-100 ps. We discuss the benefits of the higher temporal resolution for the NIF and present performance measurements for dilation x-ray imager, which utilizes pulse-dilation technology [T. J. Hilsabeck et al., Rev. Sci. Instrum. 81, 10E317 (2010)] to achieve x-ray imaging with temporal gate times below 10 ps. The measurements were conducted using the COMET laser, which is part of the Jupiter Laser Facility at the Lawrence Livermore National Laboratory.

Entities:  

Year:  2012        PMID: 23126938     DOI: 10.1063/1.4732849

Source DB:  PubMed          Journal:  Rev Sci Instrum        ISSN: 0034-6748            Impact factor:   1.523


  4 in total

1.  A color x-ray camera for 2-6 keV using a mass produced back illuminated complementary metal oxide semiconductor sensor.

Authors:  William M Holden; Oliver R Hoidn; Gerald T Seidler; Anthony D DiChiara
Journal:  Rev Sci Instrum       Date:  2018-09       Impact factor: 1.523

2.  The Theoretical Highest Frame Rate of Silicon Image Sensors.

Authors:  Takeharu Goji Etoh; Anh Quang Nguyen; Yoshinari Kamakura; Kazuhiro Shimonomura; Thi Yen Le; Nobuya Mori
Journal:  Sensors (Basel)       Date:  2017-02-28       Impact factor: 3.576

3.  Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light.

Authors:  Nguyen Hoai Ngo; Anh Quang Nguyen; Fabian M Bufler; Yoshinari Kamakura; Hideki Mutoh; Takayoshi Shimura; Takuji Hosoi; Heiji Watanabe; Philippe Matagne; Kazuhiro Shimonomura; Kohsei Takehara; Edoardo Charbon; Takeharu Goji Etoh
Journal:  Sensors (Basel)       Date:  2020-12-02       Impact factor: 3.576

4.  A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity.

Authors:  Fan Zhang; Hanben Niu
Journal:  Sensors (Basel)       Date:  2016-06-29       Impact factor: 3.576

  4 in total

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