Literature DB >> 23110992

Scanning tunneling microscopy of interface properties of Bi2Se3 on FeSe.

Yilin Wang1, Yeping Jiang, Mu Chen, Zhi Li, Canli Song, Lili Wang, Ke He, Xi Chen, Xucun Ma, Qi-Kun Xue.   

Abstract

We investigate the heteroepitaxial growth of Bi(2)Se(3) films on FeSe substrates by low-temperature scanning tunneling microscopy/spectroscopy. The growth of Bi(2)Se(3) on FeSe proceeds via van der Waals epitaxy with atomically flat morphology. A striped moiré pattern originating from the lattice mismatch between Bi(2)Se(3) and FeSe is observed. Tunneling spectra reveal the spatially inhomogeneous electronic structure of the Bi(2)Se(3) thin films, which can be ascribed to the charge transfer at the interface.

Entities:  

Year:  2012        PMID: 23110992     DOI: 10.1088/0953-8984/24/47/475604

Source DB:  PubMed          Journal:  J Phys Condens Matter        ISSN: 0953-8984            Impact factor:   2.333


  2 in total

1.  Moiré superlattices at the topological insulator Bi2Te3.

Authors:  Koen Schouteden; Zhe Li; Taishi Chen; Fengqi Song; Bart Partoens; Chris Van Haesendonck; Kyungwha Park
Journal:  Sci Rep       Date:  2016-02-08       Impact factor: 4.379

2.  Nanometric Moiré Stripes on the Surface of Bi2Se3 Topological Insulator.

Authors:  Matteo Salvato; Maurizio De Crescenzi; Mattia Scagliotti; Paola Castrucci; Simona Boninelli; Giuseppe Mario Caruso; Yi Liu; Anders Mikkelsen; Rainer Timm; Suhas Nahas; Annica Black-Schaffer; Gunta Kunakova; Jana Andzane; Donats Erts; Thilo Bauch; Floriana Lombardi
Journal:  ACS Nano       Date:  2022-09-13       Impact factor: 18.027

  2 in total

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