| Literature DB >> 23109141 |
Juqing Liu1, Zongyou Yin, Xiehong Cao, Fei Zhao, Lianhui Wang, Wei Huang, Hua Zhang.
Abstract
A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices.Entities:
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Year: 2012 PMID: 23109141 DOI: 10.1002/adma.201203349
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849