Literature DB >> 23102535

On-demand nanodevice with electrical and neuromorphic multifunction realized by local ion migration.

Rui Yang1, Kazuya Terabe, Guangqiang Liu, Tohru Tsuruoka, Tsuyoshi Hasegawa, James K Gimzewski, Masakazu Aono.   

Abstract

A potential route to extend Moore's law beyond the physical limits of existing materials and device architectures is to achieve nanotechnology breakthroughs in materials and device concepts. Here, we discuss an on-demand WO(3-x)-based nanoionic device where electrical and neuromorphic multifunctions are realized through externally induced local migration of oxygen ions. The device is found to possess a wide range of time scales of memorization, resistance switching, and rectification varying from volatile to permanent in a single device, and these can furthermore be realizable in both two- or three-terminal systems. The gradually changing volatile and nonvolatile resistance states are experimentally demonstrated to mimic the human brain's forgetting process for short-term memory and long-term memory.We propose this nanoionic device with its on-demand electrical and neuromorphic multifunction has a unique paradigm shifting potential for the fabrication of configurable circuits, analog memories, digital-neural fused networks, and more in one device architecture.

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Year:  2012        PMID: 23102535     DOI: 10.1021/nn302510e

Source DB:  PubMed          Journal:  ACS Nano        ISSN: 1936-0851            Impact factor:   15.881


  16 in total

1.  Selectively biased tri-terminal vertically-integrated memristor configuration.

Authors:  Vasileios Manouras; Spyros Stathopoulos; Alex Serb; Themis Prodromakis
Journal:  Sci Rep       Date:  2022-06-21       Impact factor: 4.996

2.  Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System.

Authors:  Lai-Guo Wang; Wei Zhang; Yan Chen; Yan-Qiang Cao; Ai-Dong Li; Di Wu
Journal:  Nanoscale Res Lett       Date:  2017-01-23       Impact factor: 4.703

3.  Memristive properties of hexagonal WO3 nanowires induced by oxygen vacancy migration.

Authors:  Xiongwu He; Yanling Yin; Jie Guo; Huajun Yuan; Yuehua Peng; Yong Zhou; Ding Zhao; Kuo Hai; Weichang Zhou; Dongsheng Tang
Journal:  Nanoscale Res Lett       Date:  2013-01-24       Impact factor: 4.703

4.  Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis.

Authors:  Adnan Younis; Dewei Chu; Sean Li
Journal:  Sci Rep       Date:  2015-09-01       Impact factor: 4.379

5.  Evolution of conduction channel and its effect on resistance switching for Au-WO₃-x-Au devices.

Authors:  D S Hong; Y S Chen; Ying Li; H W Yang; L L Wei; B G Shen; J R Sun
Journal:  Sci Rep       Date:  2014-02-11       Impact factor: 4.379

6.  Stochastic learning in oxide binary synaptic device for neuromorphic computing.

Authors:  Shimeng Yu; Bin Gao; Zheng Fang; Hongyu Yu; Jinfeng Kang; H-S Philip Wong
Journal:  Front Neurosci       Date:  2013-10-31       Impact factor: 4.677

7.  Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems.

Authors:  Yi Li; Yingpeng Zhong; Jinjian Zhang; Lei Xu; Qing Wang; Huajun Sun; Hao Tong; Xiaoming Cheng; Xiangshui Miao
Journal:  Sci Rep       Date:  2014-05-09       Impact factor: 4.379

8.  Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array.

Authors:  Sukru B Eryilmaz; Duygu Kuzum; Rakesh Jeyasingh; SangBum Kim; Matthew BrightSky; Chung Lam; H-S Philip Wong
Journal:  Front Neurosci       Date:  2014-07-22       Impact factor: 4.677

9.  Resistive Switching Memory Phenomena in PEDOT PSS: Coexistence of Switchable Diode Effect and Write Once Read Many Memory.

Authors:  Viet Cuong Nguyen; Pooi See Lee
Journal:  Sci Rep       Date:  2016-01-25       Impact factor: 4.379

10.  Modulating memristive performance of hexagonal WO3 nanowire by water-oxidized hydrogen ion implantation.

Authors:  Yong Zhou; Yuehua Peng; Yanling Yin; Fang Zhou; Chang Liu; Jing Ling; Le Lei; Weichang Zhou; Dongsheng Tang
Journal:  Sci Rep       Date:  2016-09-07       Impact factor: 4.379

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