| Literature DB >> 23097157 |
Mirko Prezioso1, Alberto Riminucci, Patrizio Graziosi, Ilaria Bergenti, Rajib Rakshit, Raimondo Cecchini, Anna Vianelli, Francesco Borgatti, Norman Haag, M Willis, Alan J Drew, William P Gillin, Valentin A Dediu.
Abstract
Memristors are one of the most promising candidates for future information and communications technology (ICT) architectures. Two experimental proofs of concept are presented based on the intermixing of spintronic and memristive effects into a single device, a magnetically enhanced memristor (MEM). By exploiting the interaction between the memristance and the giant magnetoresistance (GMR), a universal implication (IMP) logic gate based on a single MEM device is realized.Year: 2012 PMID: 23097157 DOI: 10.1002/adma.201202031
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849