Literature DB >> 23075033

Logic circuit function realization by one transistor.

Mingzhi Dai1, Ning Dai.   

Abstract

Bottom-up nanowires are very attractive building blocks for functional devices due to their controllable properties. Meanwhile, assembling nanowires into large-scale integrated circuits is a daunting challenge because for the present circuits diverse nanowires are needed to grow simultaneously together closely. Here, a nanowire trigate transistor structure is proposed which can accomplish the functions of the logic gate circuits. By adding one channel-electrode junction as the output, this interesting one-channel structure is used to realize inverter and OR logic gates. In this way, logic circuits could shrink into a single transistor.

Year:  2012        PMID: 23075033     DOI: 10.1021/nl303386b

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  6 in total

1.  Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications.

Authors:  Changhe Huo; Mingzhi Dai; Yongbin Hu; Xingye Zhang; Weiliang Wang; Hengbo Zhang; Kemin Jiang; Pengjun Wang; Thomas J Webster; Liqiang Guo; Wenqing Zhu
Journal:  Int J Nanomedicine       Date:  2019-11-05

2.  Change Of Nano Material Electrical Characteristics For Medical System Applications.

Authors:  Peiqin Chen; Xingye Zhang; Kemin Jiang; Qiang Zhang; Shaocheng Qi; Weidong Man; Thomas J Webster; Mingzhi Dai
Journal:  Int J Nanomedicine       Date:  2019-12-27

3.  Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications.

Authors:  Mingzhi Dai; Zhendong Wu; Shaocheng Qi; Changhe Huo; Qiang Zhang; Xingye Zhang; Thomas J Webster; Hengbo Zhang
Journal:  Int J Nanomedicine       Date:  2020-03-17

4.  A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy.

Authors:  Mingzhi Dai; Karim Khan; Shengnan Zhang; Kemin Jiang; Xingye Zhang; Weiliang Wang; Lingyan Liang; Hongtao Cao; Pengjun Wang; Peng Wang; Lijing Miao; Haiming Qin; Jun Jiang; Lixin Xue; Junhao Chu
Journal:  Sci Rep       Date:  2016-06-14       Impact factor: 4.379

5.  Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor.

Authors:  Mingzhi Dai; Weiliang Wang; Pengjun Wang; Muhammad Zahir Iqbal; Nasim Annabi; Nasir Amin
Journal:  Sci Rep       Date:  2017-09-08       Impact factor: 4.379

6.  Bottom-Gate Approach for All Basic Logic Gates Implementation by a Single-Type IGZO-Based MOS Transistor with Reduced Footprint.

Authors:  Shaocheng Qi; Joao Cunha; Tian-Long Guo; Peiqin Chen; Remo Proietti Zaccaria; Mingzhi Dai
Journal:  Adv Sci (Weinh)       Date:  2020-01-24       Impact factor: 16.806

  6 in total

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