Literature DB >> 23037389

Loss compensation in metamaterials through embedding of active transistor based negative differential resistance circuits.

Wangren Xu1, Willie J Padilla, Sameer Sonkusale.   

Abstract

Dielectric and ohmic losses in metamaterials are known to limit their practical use. In this paper, an all-electronic approach for loss compensation in metamaterials is presented. Each unit cell of the meta-material is embedded with a cross-coupled transistor pair based negative differential resistance circuit to cancel these losses. Design, simulation and experimental results for Split Ring Resonator (SRR) metamaterials with and without loss compensation are presented. Results indicate that the quality factor (Q) of the SRR improves by over 400% at 1.6 GHz, showing the effectiveness of the approach. The proposed technique is scalable over a broad frequency range and is limited only by the maximum operating frequency of transistors, which is reaching terahertz in today's semiconductor technologies.

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Year:  2012        PMID: 23037389     DOI: 10.1364/OE.20.022406

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  2 in total

1.  Breaking the fundamental scattering limit with gain metasurfaces.

Authors:  Chao Qian; Yi Yang; Yifei Hua; Chan Wang; Xiao Lin; Tong Cai; Dexin Ye; Erping Li; Ido Kaminer; Hongsheng Chen
Journal:  Nat Commun       Date:  2022-07-28       Impact factor: 17.694

2.  Electrically tunable terahertz metamaterials with embedded large-area transparent thin-film transistor arrays.

Authors:  Wei-Zong Xu; Fang-Fang Ren; Jiandong Ye; Hai Lu; Lanju Liang; Xiaoming Huang; Mingkai Liu; Ilya V Shadrivov; David A Powell; Guang Yu; Biaobing Jin; Rong Zhang; Youdou Zheng; Hark Hoe Tan; Chennupati Jagadish
Journal:  Sci Rep       Date:  2016-03-22       Impact factor: 4.379

  2 in total

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