| Literature DB >> 23034879 |
Woo Seok Choi1, Christopher M Rouleau, Sung Seok A Seo, Zhenlin Luo, Hua Zhou, Timothy T Fister, Jeffrey A Eastman, Paul H Fuoss, Dillon D Fong, Jonathan Z Tischler, Gyula Eres, Matthew F Chisholm, Ho Nyung Lee.
Abstract
Atomic layer engineering enables fabrication of a chemically sharp oxide heterointerface. The interface formation and strain evolution during the initial growth of LaAlO(3) /SrTiO(3) heterostructures by pulsed laser deposition are investigated in search of a means for controlling the atomic-sharpness of the interface. This study shows that inserting a monolayer of LaAlO(3) grown at high oxygen pressure dramatically enhances interface abruptness.Entities:
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Year: 2012 PMID: 23034879 DOI: 10.1002/adma.201202691
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849