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Literature DB >> 23027629

Mid-infrared HgTe/As2S3 field effect transistors and photodetectors.

Emmanuel Lhuillier¹, Sean Keuleyan, Pavlo Zolotavin, Philippe Guyot-Sionnest.

Abstract

HgTe colloidal quantum dots (CQD) in an inorganic As(2)S(3) matrix allow 100-fold higher mobility with optimized transport properties compared to HgTe-organic CQD film while remaining intrinsic. The material's electronic properties are measured by field effect transistors as a function of temperature and the responsivity and detectivity of the mid-IR photoconductors are discussed.

Year: 2012 PMID： 23027629 DOI： 10.1002/adma.201203012

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

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Cited

8 in total

1. Sample-averaged biexciton quantum yield measured by solution-phase photon correlation.

Authors: Andrew P Beyler; Thomas S Bischof; Jian Cui; Igor Coropceanu; Daniel K Harris; Moungi G Bawendi
Journal: Nano Lett Date: 2014-11-19 Impact factor: 11.189

2. High infrared photoconductivity in films of arsenic-sulfide-encapsulated lead-sulfide nanocrystals.

Authors: Sergii Yakunin; Dmitry N Dirin; Loredana Protesescu; Mykhailo Sytnyk; Sajjad Tollabimazraehno; Markus Humer; Florian Hackl; Thomas Fromherz; Maryna I Bodnarchuk; Maksym V Kovalenko; Wolfgang Heiss
Journal: ACS Nano Date: 2014-12-08 Impact factor: 15.881

3. Solution Processed Hybrid Polymer: HgTe Quantum Dot Phototransistor with High Sensitivity and Fast Infrared Response up to 2400 nm at Room Temperature.

Authors: Yifan Dong; Mengyu Chen; Wai Kin Yiu; Qiang Zhu; Guodong Zhou; Stephen V Kershaw; Ning Ke; Ching Ping Wong; Andrey L Rogach; Ni Zhao
Journal: Adv Sci (Weinh) Date: 2020-05-10 Impact factor: 16.806

Mid-infrared HgTe/As2S3 field effect transistors and photodetectors.

1. Sample-averaged biexciton quantum yield measured by solution-phase photon correlation.

2. High infrared photoconductivity in films of arsenic-sulfide-encapsulated lead-sulfide nanocrystals.

3. Solution Processed Hybrid Polymer: HgTe Quantum Dot Phototransistor with High Sensitivity and Fast Infrared Response up to 2400 nm at Room Temperature.

Review 4. Road Map for Nanocrystal Based Infrared Photodetectors.

5. Narrow bandgap oxide nanoparticles coupled with graphene for high performance mid-infrared photodetection.

Review 6. Electronic and Thermal Properties of Graphene and Recent Advances in Graphene Based Electronics Applications.

7. Thin MAPb_0.5Sn_0.5I₃ Perovskite Single Crystals for Sensitive Infrared Light Detection.

8. Tailoring spontaneous infrared emission of HgTe quantum dots with laser-printed plasmonic arrays.

Mid-infrared HgTe/As2S3 field effect transistors and photodetectors.

1. Sample-averaged biexciton quantum yield measured by solution-phase photon correlation.

2. High infrared photoconductivity in films of arsenic-sulfide-encapsulated lead-sulfide nanocrystals.

3. Solution Processed Hybrid Polymer: HgTe Quantum Dot Phototransistor with High Sensitivity and Fast Infrared Response up to 2400 nm at Room Temperature.

Review 4. Road Map for Nanocrystal Based Infrared Photodetectors.

5. Narrow bandgap oxide nanoparticles coupled with graphene for high performance mid-infrared photodetection.

Review 6. Electronic and Thermal Properties of Graphene and Recent Advances in Graphene Based Electronics Applications.

7. Thin MAPb0.5Sn0.5I3 Perovskite Single Crystals for Sensitive Infrared Light Detection.

8. Tailoring spontaneous infrared emission of HgTe quantum dots with laser-printed plasmonic arrays.

7. Thin MAPb_0.5Sn_0.5I₃ Perovskite Single Crystals for Sensitive Infrared Light Detection.