Literature DB >> 23023876

Active control of ferroelectric switching using defect-dipole engineering.

Daesu Lee1, Byung Chul Jeon, Seung Hyub Baek, Sang Mo Yang, Yeong Jae Shin, Tae Heon Kim, Yong Su Kim, Jong-Gul Yoon, Chang Beom Eom, Tae Won Noh.   

Abstract

Active control of defect structures and associated polarization switching in a ferroelectric material is achieved without compromising its ferroelectric properties. Based on dipolar interaction between defect dipole and polarization, the unique functionality of the defect dipole to control ferroelectric switching is visualized. This approach can provide a foundation for novel ferroelectric applications, such as high-density multilevel data storage.
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Year:  2012        PMID: 23023876     DOI: 10.1002/adma.201203101

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  2 in total

1.  Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency.

Authors:  Kyoungjun Lee; Kunwoo Park; Hyun-Jae Lee; Myeong Seop Song; Kyu Cheol Lee; Jin Namkung; Jun Hee Lee; Jungwon Park; Seung Chul Chae
Journal:  Sci Rep       Date:  2021-03-18       Impact factor: 4.379

2.  Kinetic control of tunable multi-state switching in ferroelectric thin films.

Authors:  R Xu; S Liu; S Saremi; R Gao; J J Wang; Z Hong; H Lu; A Ghosh; S Pandya; E Bonturim; Z H Chen; L Q Chen; A M Rappe; L W Martin
Journal:  Nat Commun       Date:  2019-03-20       Impact factor: 14.919

  2 in total

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