| Literature DB >> 23023876 |
Daesu Lee1, Byung Chul Jeon, Seung Hyub Baek, Sang Mo Yang, Yeong Jae Shin, Tae Heon Kim, Yong Su Kim, Jong-Gul Yoon, Chang Beom Eom, Tae Won Noh.
Abstract
Active control of defect structures and associated polarization switching in a ferroelectric material is achieved without compromising its ferroelectric properties. Based on dipolar interaction between defect dipole and polarization, the unique functionality of the defect dipole to control ferroelectric switching is visualized. This approach can provide a foundation for novel ferroelectric applications, such as high-density multilevel data storage.Entities:
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Year: 2012 PMID: 23023876 DOI: 10.1002/adma.201203101
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849