Literature DB >> 23006398

Detection and in situ switching of unreversed interfacial antiferromagnetic spins in a perpendicular-exchange-biased system.

Yu Shiratsuchi1, Hayato Noutomi, Hiroto Oikawa, Tetsuya Nakamura, Motohiro Suzuki, Toshiaki Fujita, Kazuto Arakawa, Yuichiro Takechi, Hirotaro Mori, Toyohiko Kinoshita, Masahiko Yamamoto, Ryoichi Nakatani.   

Abstract

By using the perpendicular-exchange-biased Pt/Co/α-Cr(2)O(3) system, we provide experimental evidence that the unreversed uncompensated Cr spins exist at the Co/α-Cr(2)O(3) interface. The unreversed uncompensated Cr spin manifests itself in both the vertical shift of an element-specific magnetization curve and the relative peak intensity of soft-x-ray magnetic circular dichroism spectrum. We also demonstrate an in situ switching of the interfacial Cr spins and correspondingly a reversal of the exchange bias without interfacial atomic diffusion. Such switching shows the direct relationship between the interfacial antiferromagnetic spins and origin of the exchange bias. The demonstrated switching of exchange bias would likely offer a new design of advanced spintronics devices, using the perpendicular-exchange-biased system, with low power consumption and ultrafast operation.

Entities:  

Year:  2012        PMID: 23006398     DOI: 10.1103/PhysRevLett.109.077202

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  5 in total

1.  Tailoring exchange couplings in magnetic topological-insulator/antiferromagnet heterostructures.

Authors:  Qing Lin He; Xufeng Kou; Alexander J Grutter; Gen Yin; Lei Pan; Xiaoyu Che; Yuxiang Liu; Tianxiao Nie; Bin Zhang; Steven M Disseler; Brian J Kirby; William Ratcliff Ii; Qiming Shao; Koichi Murata; Xiaodan Zhu; Guoqiang Yu; Yabin Fan; Mohammad Montazeri; Xiaodong Han; Julie A Borchers; Kang L Wang
Journal:  Nat Mater       Date:  2016-10-31       Impact factor: 43.841

2.  Hybridization-controlled charge transfer and induced magnetism at correlated oxide interfaces.

Authors:  J Varignon; G Sanchez-Santolino; M N Grisolia; A Arora; S Valencia; M Varela; R Abrudan; E Weschke; E Schierle; J E Rault; J-P Rueff; A Barthélémy; J Santamaria; M Bibes
Journal:  Nat Phys       Date:  2016-01-25       Impact factor: 20.034

3.  Crystal Structure Manipulation of the Exchange Bias in an Antiferromagnetic Film.

Authors:  Wei Yuan; Tang Su; Qi Song; Wenyu Xing; Yangyang Chen; Tianyu Wang; Zhangyuan Zhang; Xiumei Ma; Peng Gao; Jing Shi; Wei Han
Journal:  Sci Rep       Date:  2016-06-22       Impact factor: 4.379

4.  Purely antiferromagnetic magnetoelectric random access memory.

Authors:  Tobias Kosub; Martin Kopte; Ruben Hühne; Patrick Appel; Brendan Shields; Patrick Maletinsky; René Hübner; Maciej Oskar Liedke; Jürgen Fassbender; Oliver G Schmidt; Denys Makarov
Journal:  Nat Commun       Date:  2017-01-03       Impact factor: 14.919

5.  Microstructures and Interface Magnetic Moments in Mn2VAl/Fe Layered Films Showing Exchange Bias.

Authors:  Takahide Kubota; Yusuke Shimada; Tomoki Tsuchiya; Tomoki Yoshikawa; Keita Ito; Yukiharu Takeda; Yuji Saitoh; Toyohiko J Konno; Akio Kimura; Koki Takanashi
Journal:  Nanomaterials (Basel)       Date:  2021-06-30       Impact factor: 5.076

  5 in total

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