Literature DB >> 23006385

n-type doping of germanium from phosphine: early stages resolved at the atomic level.

G Scappucci1, O Warschkow, G Capellini, W M Klesse, D R McKenzie, M Y Simmons.   

Abstract

To understand the atomistic doping process of phosphorus in germanium, we present a combined scanning tunneling microscopy, temperature programed desorption, and density functional theory study of the reactions of phosphine with the Ge(001) surface. Combining experimental and theoretical results, we demonstrate that PH(2) + H with a footprint of one Ge dimer is the only product of room temperature chemisorption. Further dissociation requires thermal activation. At saturation coverage, PH(2) + H species self-assemble into ordered patterns leading to phosphorus coverages of up to 0.5 monolayers.

Entities:  

Year:  2012        PMID: 23006385     DOI: 10.1103/PhysRevLett.109.076101

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  Bottom-up assembly of metallic germanium.

Authors:  Giordano Scappucci; Wolfgang M Klesse; LaReine A Yeoh; Damien J Carter; Oliver Warschkow; Nigel A Marks; David L Jaeger; Giovanni Capellini; Michelle Y Simmons; Alexander R Hamilton
Journal:  Sci Rep       Date:  2015-08-10       Impact factor: 4.379

  1 in total

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