Literature DB >> 23006107

Evidence of sharp and diffuse domain walls in BiFeO3 by means of unit-cell-wise strain and polarization maps obtained with high resolution scanning transmission electron microscopy.

A Lubk1, M D Rossell, J Seidel, Q He, S Y Yang, Y H Chu, R Ramesh, M J Hÿtch, E Snoeck.   

Abstract

Domain walls (DWs) substantially influence a large number of applications involving ferroelectric materials due to their limited mobility when shifted during polarization switching. The discovery of greatly enhanced conduction at BiFeO(3) DWs has highlighted yet another role of DWs as a local material state with unique properties. However, the lack of precise information on the local atomic structure is still hampering microscopical understanding of DW properties. Here, we examine the atomic structure of BiFeO(3) 109° DWs with pm precision by a combination of high-angle annular dark-field scanning transmission electron microscopy and a dedicated structural analysis. By measuring simultaneously local polarization and strain, we provide direct experimental proof for the straight DW structure predicted by ab initio calculations as well as the recently proposed theory of diffuse DWs, thus resolving a long-standing discrepancy between experimentally measured and theoretically predicted DW mobilities.

Year:  2012        PMID: 23006107     DOI: 10.1103/PhysRevLett.109.047601

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  4 in total

1.  Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories.

Authors:  Jun Jiang; Zi Long Bai; Zhi Hui Chen; Long He; David Wei Zhang; Qing Hua Zhang; Jin An Shi; Min Hyuk Park; James F Scott; Cheol Seong Hwang; An Quan Jiang
Journal:  Nat Mater       Date:  2017-11-20       Impact factor: 43.841

Review 2.  Functional Ferroic Domain Walls for Nanoelectronics.

Authors:  Pankaj Sharma; Peggy Schoenherr; Jan Seidel
Journal:  Materials (Basel)       Date:  2019-09-10       Impact factor: 3.623

3.  Atomic configurations at InAs partial dislocation cores associated with Z-shape faulted dipoles.

Authors:  Luying Li; Zhaofeng Gan; Martha R McCartney; Hanshuang Liang; Hongbin Yu; Yihua Gao; Jianbo Wang; David J Smith
Journal:  Sci Rep       Date:  2013-11-15       Impact factor: 4.379

4.  Superior polarization retention through engineered domain wall pinning.

Authors:  Dawei Zhang; Daniel Sando; Pankaj Sharma; Xuan Cheng; Fan Ji; Vivasha Govinden; Matthew Weyland; Valanoor Nagarajan; Jan Seidel
Journal:  Nat Commun       Date:  2020-01-17       Impact factor: 14.919

  4 in total

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