Literature DB >> 23004300

Floating electron states in covalent semiconductors.

Yu-ichiro Matsushita1, Shinnosuke Furuya, Atsushi Oshiyama.   

Abstract

We report first-principles electronic-structure calculations that clarify the floating nature of electron states in covalent semiconductors. It is found that wave functions of several conduction- and valence-band states, including the conduction-band minima, do not distribute near atomic sites, as was taken for granted, but float in interstitial channels in most semiconductors. The directions and shapes of the interstitial channels depend on the crystal symmetry so that mysterious variation of the energy gaps in SiC polymorphs is naturally explained by considering the floating nature.

Year:  2012        PMID: 23004300     DOI: 10.1103/PhysRevLett.108.246404

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Extended Hückel Semi-Empirical Approach as an Efficient Method for Structural Defects Analysis in 4H-SiC.

Authors:  Janusz Wozny; Andrii Kovalchuk; Jacek Podgorski; Zbigniew Lisik
Journal:  Materials (Basel)       Date:  2021-03-06       Impact factor: 3.623

2.  Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface.

Authors:  Kengo Nishio; Tomoe Yayama; Takehide Miyazaki; Noriyuki Taoka; Mitsuaki Shimizu
Journal:  Sci Rep       Date:  2018-01-23       Impact factor: 4.379

  2 in total

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