Literature DB >> 23003161

STM imaging of impurity resonances on Bi2Se3.

Zhanybek Alpichshev1, Rudro R Biswas, Alexander V Balatsky, J G Analytis, J-H Chu, I R Fisher, A Kapitulnik.   

Abstract

In this Letter we present detailed study of the density of states near defects in Bi2Se3. In particular, we present data on the commonly found triangular defects in this system. While we do not find any measurable quasiparticle scattering interference effects, we do find localized resonances, which can be well fitted by theory [R. R. Biswas and A. V. Balatsky, Phys. Rev. B 81, 233405(R) (2010)] once the potential is taken to be extended to properly account for the observed defects. The data together with the fits confirm that while the local density of states around the Dirac point of the electronic spectrum at the surface is significantly disrupted near the impurity by the creation of low-energy resonance state, the Dirac point is not locally destroyed. We discuss our results in terms of the expected protected surface state of topological insulators.

Entities:  

Year:  2012        PMID: 23003161     DOI: 10.1103/PhysRevLett.108.206402

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  8 in total

1.  Gate-tuned normal and superconducting transport at the surface of a topological insulator.

Authors:  Benjamin Sacépé; Jeroen B Oostinga; Jian Li; Alberto Ubaldini; Nuno J G Couto; Enrico Giannini; Alberto F Morpurgo
Journal:  Nat Commun       Date:  2011-12-06       Impact factor: 14.919

2.  Evaluation of mobility in thin Bi2Se3 topological insulator for prospects of local electrical interconnects.

Authors:  Gaurav Gupta; Mansoor Bin Abdul Jalil; Gengchiau Liang
Journal:  Sci Rep       Date:  2014-10-30       Impact factor: 4.379

3.  Disorder enabled band structure engineering of a topological insulator surface.

Authors:  Yishuai Xu; Janet Chiu; Lin Miao; Haowei He; Zhanybek Alpichshev; A Kapitulnik; Rudro R Biswas; L Andrew Wray
Journal:  Nat Commun       Date:  2017-02-03       Impact factor: 14.919

4.  High-temperature quantum oscillations of the Hall resistance in bulk Bi2Se3.

Authors:  Marco Busch; Olivio Chiatti; Sergio Pezzini; Steffen Wiedmann; Jaime Sánchez-Barriga; Oliver Rader; Lada V Yashina; Saskia F Fischer
Journal:  Sci Rep       Date:  2018-01-11       Impact factor: 4.379

5.  Atomic and electronic structure of an alloyed topological insulator, Bi1.5Sb0.5Te1.7Se1.3.

Authors:  Wonhee Ko; Insu Jeon; Hyo Won Kim; Hyeokshin Kwon; Se-Jong Kahng; Joonbum Park; Jun Sung Kim; Sung Woo Hwang; Hwansoo Suh
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

6.  Effect of band-alignment operation on carrier transport in Bi2Se3 topological insulator.

Authors:  Gaurav Gupta; Mansoor Bin Abdul Jalil; Gengchiau Liang
Journal:  Sci Rep       Date:  2014-08-28       Impact factor: 4.379

7.  Dual nature of magnetic dopants and competing trends in topological insulators.

Authors:  Paolo Sessi; Rudro R Biswas; Thomas Bathon; Oliver Storz; Stefan Wilfert; Alessandro Barla; Konstantin A Kokh; Oleg E Tereshchenko; Kai Fauth; Matthias Bode; Alexander V Balatsky
Journal:  Nat Commun       Date:  2016-06-27       Impact factor: 14.919

8.  Massive Dirac Fermion Observed in Lanthanide-Doped Topological Insulator Thin Films.

Authors:  S E Harrison; L J Collins-McIntyre; P Schönherr; A Vailionis; V Srot; P A van Aken; A J Kellock; A Pushp; S S P Parkin; J S Harris; B Zhou; Y L Chen; T Hesjedal
Journal:  Sci Rep       Date:  2015-10-27       Impact factor: 4.379

  8 in total

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