Literature DB >> 22918190

Enhanced light emission of GaN-based diodes with a NiO(x)/graphene hybrid electrode.

Yiyun Zhang1, Xiao Li, Liancheng Wang, Xiaoyan Yi, Dehai Wu, Hongwei Zhu, Guohong Wang.   

Abstract

A NiO(x) buffer layer is introduced in GaN-based light-emitting diodes to form low resistance ohmic contacts between p-type GaN and graphene conductive electrodes, leading to improved performance with lower operating voltage and higher light output power.

Entities:  

Year:  2012        PMID： 22918190     DOI： 10.1039/c2nr31986a

Source DB:  PubMed          Journal:  Nanoscale        ISSN： 2040-3364            Impact factor:   7.790


  4 in total

1.  Enhanced performance of photonic crystal GaN light-emitting diodes with graphene transparent electrodes.

Authors:  Hai-Liang Ge; Chen Xu; Kun Xu; Meng Xun; Jun Wang; Jie Liu
Journal:  Nanoscale Res Lett       Date:  2015-03-01       Impact factor: 4.703

2.  Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots.

Authors:  T N Lin; M R Inciong; S R M S Santiago; T W Yeh; W Y Yang; C T Yuan; J L Shen; H C Kuo; C H Chiu
Journal:  Sci Rep       Date:  2016-03-18       Impact factor: 4.379

3.  Electrochemical Deposition of ZnO Nanowires on CVD-Graphene/Copper Substrates.

Authors:  Issam Boukhoubza; Elena Matei; Anouar Jorio; Monica Enculescu; Ionut Enculescu
Journal:  Nanomaterials (Basel)       Date:  2022-08-19       Impact factor: 5.719

Review 4.  Graphene as a Transparent Conductive Electrode in GaN-Based LEDs.

Authors:  Hehe Zhang; Jan Mischke; Wolfgang Mertin; Gerd Bacher
Journal:  Materials (Basel)       Date:  2022-03-16       Impact factor: 3.623
  4 in total

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