Literature DB >> 22899126

Lithium-niobate-based surface acoustic wave oscillator directly integrated with CMOS sustaining amplifier.

Shuji Tanaka1, KyeongDong Park, Masayoshi Esashi.   

Abstract

In this study, a LiNbO(3)-based SAW resonator was directly integrated with a CMOS sustaining amplifier using new wafer-bonding-based integration technology. The developed integration technology has overcome the large thermal expansion mismatch between LiNbO(3) (14 to 15 ppm/K along the a-axis) and Si (2.6 ppm/K) by temporary wafer supporting and low-temperature Au-Au bonding. Two kinds of bonding, UV polymer bonding for temporary wafer supporting and Au-Au bonding following plasma surface activation, are key process technologies. A 500-MHz one-chip SAW oscillator was prototyped and evaluated. A low phase noise of -122 dBc/ Hz at 10 kHz offset and -160 dBc/Hz at 500 kHz offset was achieved.

Entities:  

Year:  2012        PMID: 22899126     DOI: 10.1109/TUFFC.2012.2384

Source DB:  PubMed          Journal:  IEEE Trans Ultrason Ferroelectr Freq Control        ISSN: 0885-3010            Impact factor:   2.725


  1 in total

1.  Stacked Integration of MEMS on LSI.

Authors:  Masayoshi Esashi; Shuji Tanaka
Journal:  Micromachines (Basel)       Date:  2016-08-05       Impact factor: 2.891

  1 in total

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