| Literature DB >> 22887686 |
Sun Kak Hwang1, Insung Bae, Richard Hahnkee Kim, Cheolmin Park.
Abstract
A flexible field-effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance.Entities:
Mesh:
Substances:
Year: 2012 PMID: 22887686 DOI: 10.1002/adma.201201831
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849