Literature DB >> 22887650

Preparation of MoS₂-polyvinylpyrrolidone nanocomposites for flexible nonvolatile rewritable memory devices with reduced graphene oxide electrodes.

Juqing Liu1, Zhiyuan Zeng, Xiehong Cao, Gang Lu, Lian-Hui Wang, Qu-Li Fan, Wei Huang, Hua Zhang.   

Abstract

A facile method for exfoliation and dispersion of molybdenum disulfide (MoS2) with the aid of polyvinylpyrrolidone (PVP) is proposed. The resultant PVP-coated MoS2 nanosheets, i.e., MoS2-PVP nanocomposites, are well dispersed in the low-boiling ethanol solvent, facilitating their thin film preparation and the device fabrication by solution processing technique. As a proof of concept, a flexible memory diode with the configuration of reduced graphene oxide (rGO)/MoS2-PVP/Al exhibited a typical bistable electrical switching and nonvolatile rewritable memory effect with the function of flash. These experimental results prove that the electrical transition is due to the charge trapping and detrapping behavior of MoS2 in the PVP dielectric material. This study paves a way of employing two-dimensional nanomaterials as both functional materials and conducting electrodes for the future flexible data storage.
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  MoS2; flash; memory device; reduced graphene oxide; two-dimensional nanomaterial

Year:  2012        PMID: 22887650     DOI: 10.1002/smll.201200999

Source DB:  PubMed          Journal:  Small        ISSN: 1613-6810            Impact factor:   13.281


  35 in total

1.  Flexible Thin-Film Electrodes on Porous Polyester Membranes for Wearable Sensors.

Authors:  Aveek Gangopadhyay; Brian J Nablo; Mulpuri V Rao; Darwin R Reyes
Journal:  Adv Eng Mater       Date:  2017       Impact factor: 3.862

Review 2.  Decade of 2D-materials-based RRAM devices: a review.

Authors:  Muhammad Muqeet Rehman; Hafiz Mohammad Mutee Ur Rehman; Jahan Zeb Gul; Woo Young Kim; Khasan S Karimov; Nisar Ahmed
Journal:  Sci Technol Adv Mater       Date:  2020-03-18       Impact factor: 8.090

3.  Synthesis of 2D MoS2(1-x)Se2x semiconductor alloy by chemical vapor deposition.

Authors:  Wenwen Yao; Zhilin Kang; Jiajun Deng; Yan Chen; Qian Song; Xun Lei Ding; Fangchao Lu; Wenjie Wang
Journal:  RSC Adv       Date:  2020-11-20       Impact factor: 4.036

4.  Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blends.

Authors:  Ye Zhou; Su-Ting Han; Yan Yan; Li Zhou; Long-Biao Huang; Jiaqing Zhuang; Prashant Sonar; V A L Roy
Journal:  Sci Rep       Date:  2015-06-01       Impact factor: 4.379

5.  Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset.

Authors:  Muhammad Muqeet Rehman; Ghayas Uddin Siddiqui; Jahan Zeb Gul; Soo-Wan Kim; Jong Hwan Lim; Kyung Hyun Choi
Journal:  Sci Rep       Date:  2016-11-04       Impact factor: 4.379

6.  Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films.

Authors:  Yifei Yu; Chun Li; Yi Liu; Liqin Su; Yong Zhang; Linyou Cao
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

7.  Flexible transition metal dichalcogenide nanosheets for band-selective photodetection.

Authors:  Dhinesh Babu Velusamy; Richard Hahnkee Kim; Soonyoung Cha; June Huh; Reza Khazaeinezhad; Sahar Hosseinzadeh Kassani; Giyoung Song; Suk Man Cho; Sung Hwan Cho; Ihn Hwang; Jinseong Lee; Kyunghwan Oh; Hyunyoug Choi; Cheolmin Park
Journal:  Nat Commun       Date:  2015-09-02       Impact factor: 14.919

8.  Functionalized graphitic carbon nitride for metal-free, flexible and rewritable nonvolatile memory device via direct laser-writing.

Authors:  Fei Zhao; Huhu Cheng; Yue Hu; Long Song; Zhipan Zhang; Lan Jiang; Liangti Qu
Journal:  Sci Rep       Date:  2014-07-30       Impact factor: 4.379

9.  High-efficiency exfoliation of layered materials into 2D nanosheets in switchable CO2/Surfactant/H2O system.

Authors:  Nan Wang; Qun Xu; Shanshan Xu; Yuhang Qi; Meng Chen; Hongxiang Li; Buxing Han
Journal:  Sci Rep       Date:  2015-11-16       Impact factor: 4.379

10.  A Facile Way to Fabricate High-Performance Solution-Processed n-MoS2/p-MoS2 Bilayer Photodetectors.

Authors:  Jian Ye; Xueliang Li; Jianjun Zhao; Xuelan Mei; Qian Li
Journal:  Nanoscale Res Lett       Date:  2015-11-25       Impact factor: 4.703

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