Literature DB >> 22861866

Critical point coupling and proximity effects in 4He at the superfluid transition.

Justin K Perron1, Francis M Gasparini.   

Abstract

We report measurements of the superfluid fraction ρ(s)/ρ and specific heat c(p) near the superfluid transition of 4He when confined in an array of (2  μm)3 boxes at a separation of S=2  μm and coupled through a 32.5 nm film. We find that c(p) is strongly enhanced when compared with data where coupling is not present. An analysis of this excess signal shows that it is proportional to the finite-size correlation length in the boxes ξ(t,L), and it is measurable as far as S/ξ∼30-50. We obtain ξ(0,L) and the scaling function (within a constant) for ξ(t,L) in an L3 box geometry. Furthermore, we find that ρ(s)/ρ of the film persists a full decade closer to the bulk transition temperature T(λ) than a film uninfluenced by proximity effects. This excess in ρ(s)/ρ is measurable even when S/ξ>100, which cannot be understood on the basis of mean field theory.

Year:  2012        PMID: 22861866     DOI: 10.1103/PhysRevLett.109.035302

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  Fabrication of uniform nanoscale cavities via silicon direct wafer bonding.

Authors:  Stephen R D Thomson; Justin K Perron; Mark O Kimball; Sarabjit Mehta; Francis M Gasparini
Journal:  J Vis Exp       Date:  2014-01-09       Impact factor: 1.355

  1 in total

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