Current stress induced electrical instability in transparent zinc tin oxide thin-film transistors.

Transparent zinc tin oxide thin-film transistors (ZTO-TFTs) [Zn:Sn = 4:1-2:1] have been fabricated so as to estimate the electrical instability under constant current stress. The relative intensity of the drain current noise power spectra density has been shown to have a typical 1/f-noise character, and it is implied that the mobility fluctuation in ZTO-TFT [Zn:Sn = 4:1] can be enhanced by a short-range ordering in amorphous Zn-Sn-oxide, causing a larger shift of the threshold voltage (deltaV(th)).