Literature DB >> 22812909

Ferroelectricity in Simple Binary ZrO2 and HfO2.

Johannes Müller1, Tim S Böscke, Uwe Schröder, Stefan Mueller, Dennis Bräuhaus, Ulrich Böttger, Lothar Frey, Thomas Mikolajick.   

Abstract

The transition metal oxides ZrO(2) and HfO(2) as well as their solid solution are widely researched and, like most binary oxides, are expected to exhibit centrosymmetric crystal structure and therewith linear dielectric characteristics. For this reason, those oxides, even though successfully introduced into microelectronics, were never considered to be more than simple dielectrics possessing limited functionality. Here we report the discovery of a field-driven ferroelectric phase transition in pure, sub 10 nm ZrO(2) thin films and a composition- and temperature-dependent transition to a stable ferroelectric phase in the HfO(2)-ZrO(2) mixed oxide. These unusual findings are attributed to a size-driven tetragonal to orthorhombic phase transition that in thin films, similar to the anticipated tetragonal to monoclinic transition, is lowered to room temperature. A structural investigation revealed the orthorhombic phase to be of space group Pbc2(1), whose noncentrosymmetric nature is deemed responsible for the spontaneous polarization in this novel, nanoscale ferroelectrics.

Entities:  

Year:  2012        PMID: 22812909     DOI: 10.1021/nl302049k

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  27 in total

1.  Enhanced ferroelectricity in ultrathin films grown directly on silicon.

Authors:  Suraj S Cheema; Daewoong Kwon; Nirmaan Shanker; Roberto Dos Reis; Shang-Lin Hsu; Jun Xiao; Haigang Zhang; Ryan Wagner; Adhiraj Datar; Margaret R McCarter; Claudy R Serrao; Ajay K Yadav; Golnaz Karbasian; Cheng-Hsiang Hsu; Ava J Tan; Li-Chen Wang; Vishal Thakare; Xiang Zhang; Apurva Mehta; Evguenia Karapetrova; Rajesh V Chopdekar; Padraic Shafer; Elke Arenholz; Chenming Hu; Roger Proksch; Ramamoorthy Ramesh; Jim Ciston; Sayeef Salahuddin
Journal:  Nature       Date:  2020-04-22       Impact factor: 49.962

2.  Antiferroelectric negative capacitance from a structural phase transition in zirconia.

Authors:  Michael Hoffmann; Zheng Wang; Nujhat Tasneem; Ahmad Zubair; Prasanna Venkatesan Ravindran; Mengkun Tian; Anthony Arthur Gaskell; Dina Triyoso; Steven Consiglio; Kandabara Tapily; Robert Clark; Jae Hur; Sai Surya Kiran Pentapati; Sung Kyu Lim; Milan Dopita; Shimeng Yu; Winston Chern; Josh Kacher; Sebastian E Reyes-Lillo; Dimitri Antoniadis; Jayakanth Ravichandran; Stefan Slesazeck; Thomas Mikolajick; Asif Islam Khan
Journal:  Nat Commun       Date:  2022-03-09       Impact factor: 14.919

3.  Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors.

Authors:  Suraj S Cheema; Nirmaan Shanker; Li-Chen Wang; Cheng-Hsiang Hsu; Shang-Lin Hsu; Yu-Hung Liao; Matthew San Jose; Jorge Gomez; Wriddhi Chakraborty; Wenshen Li; Jong-Ho Bae; Steve K Volkman; Daewoong Kwon; Yoonsoo Rho; Gianni Pinelli; Ravi Rastogi; Dominick Pipitone; Corey Stull; Matthew Cook; Brian Tyrrell; Vladimir A Stoica; Zhan Zhang; John W Freeland; Christopher J Tassone; Apurva Mehta; Ghazal Saheli; David Thompson; Dong Ik Suh; Won-Tae Koo; Kab-Jin Nam; Dong Jin Jung; Woo-Bin Song; Chung-Hsun Lin; Seunggeol Nam; Jinseong Heo; Narendra Parihar; Costas P Grigoropoulos; Padraic Shafer; Patrick Fay; Ramamoorthy Ramesh; Souvik Mahapatra; Jim Ciston; Suman Datta; Mohamed Mohamed; Chenming Hu; Sayeef Salahuddin
Journal:  Nature       Date:  2022-04-06       Impact factor: 69.504

4.  Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency.

Authors:  Kyoungjun Lee; Kunwoo Park; Hyun-Jae Lee; Myeong Seop Song; Kyu Cheol Lee; Jin Namkung; Jun Hee Lee; Jungwon Park; Seung Chul Chae
Journal:  Sci Rep       Date:  2021-03-18       Impact factor: 4.379

5.  Enhanced Unipolar Resistive Switching Characteristics of Hf0.5Zr0.5O2 Thin Films with High ON/OFF Ratio.

Authors:  Zhipeng Wu; Jun Zhu
Journal:  Materials (Basel)       Date:  2017-03-22       Impact factor: 3.623

6.  Habituation/Fatigue behavior of a synapse memristor based on IGZO-HfO2 thin film.

Authors:  Ran Jiang; Pengfei Ma; Zuyin Han; Xianghao Du
Journal:  Sci Rep       Date:  2017-08-24       Impact factor: 4.379

Review 7.  Emerging Applications for High K Materials in VLSI Technology.

Authors:  Robert D Clark
Journal:  Materials (Basel)       Date:  2014-04-10       Impact factor: 3.623

Review 8.  Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks.

Authors:  Xin Meng; Young-Chul Byun; Harrison S Kim; Joy S Lee; Antonio T Lucero; Lanxia Cheng; Jiyoung Kim
Journal:  Materials (Basel)       Date:  2016-12-12       Impact factor: 3.623

9.  The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film.

Authors:  Takao Shimizu; Kiliha Katayama; Takanori Kiguchi; Akihiro Akama; Toyohiko J Konno; Osami Sakata; Hiroshi Funakubo
Journal:  Sci Rep       Date:  2016-09-09       Impact factor: 4.379

10.  Enhancement of the blue photoluminescence intensity for the porous silicon with HfO2 filling into microcavities.

Authors:  Ran Jiang; Xianghao Du; Weideng Sun; Zuyin Han; Zhengran Wu
Journal:  Sci Rep       Date:  2015-10-27       Impact factor: 4.379

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