Literature DB >> 22807701

The synthetic cobalt vanadium selenite, Co₂V₂Se₂O₁₁.

Faiz Rabbani1, Iwan Zimmermann, Mats Johnsson.   

Abstract

The crystal structure of dicobalt(II) divanadium(V) disel-enium(IV) undeca-oxide, Co₂V₂Se₂O₁₁, exhibits a three-dimensional framework, the building units being distorted CoO₆ octa-hedra and VO₅ square pyramids arranged so as to form alternate chains along [010]. The framework has channels along [100] and [010] in which the two Ψ-SeO₃E (site symmetries m; E being the 4s² lone electron pair of Se(IV)) tetra-hedra reside and connect to the other building blocks. The structure contains corner- and edge-sharing CoO₆ octa-hedra, corner- and edge-sharing VO₅ square pyramids and edge-sharing Ψ-SeO₃E tetra-hedra. Co₂V₂Se₂O₁₁ is the first oxide containing all the cations Co(II), V(V) and Se(IV).

Entities:  

Year:  2012        PMID: 22807701      PMCID: PMC3393144          DOI: 10.1107/S1600536812027286

Source DB:  PubMed          Journal:  Acta Crystallogr Sect E Struct Rep Online        ISSN: 1600-5368


Related literature

For general background, including bond-valence-sum calculations, see: Brown & Altermatt (1985 ▶). For related structures, see: Allen et al. (2004 ▶); Becker et al. (2007 ▶); Jiang et al. (2008 ▶); Millet et al. (1999 ▶); Pitzschenke & Jansen (2007 ▶); Sauerbrei et al. (1974 ▶).

Experimental

Crystal data

Co2V2Se2O11 M = 553.66 Monoclinic, a = 4.7913 (2) Å b = 8.8680 (4) Å c = 10.6156 (5) Å β = 101.115 (5)° V = 442.59 (3) Å3 Z = 2 Mo Kα radiation μ = 14.01 mm−1 T = 292 K 0.05 × 0.03 × 0.02 mm

Data collection

Oxford Diffraction Xcalibur Sapphire3 diffractometer Absorption correction: analytical [CrysAlis RED (Oxford Diffraction, 2007 ▶), based on expressions derived by Clark & Reid (1995 ▶)] T min = 0.659, T max = 0.756 4219 measured reflections 1534 independent reflections 1023 reflections with I > 2σ(I) R int = 0.051

Refinement

R[F 2 > 2σ(F 2)] = 0.032 wR(F 2) = 0.048 S = 0.76 1534 reflections 85 parameters Δρmax = 1.28 e Å−3 Δρmin = −0.98 e Å−3 Data collection: CrysAlis CCD (Oxford Diffraction, 2007 ▶); cell refinement: CrysAlis RED (Oxford Diffraction, 2007 ▶); data reduction: CrysAlis RED; program(s) used to solve structure: SHELXS97 (Sheldrick, 2008 ▶); program(s) used to refine structure: SHELXL97 (Sheldrick, 2008 ▶); molecular graphics: DIAMOND (Brandenburg, 2001 ▶); software used to prepare material for publication: enCIFer (Allen et al., 2004 ▶). Crystal structure: contains datablock(s) I, global. DOI: 10.1107/S1600536812027286/pk2421sup1.cif Structure factors: contains datablock(s) I. DOI: 10.1107/S1600536812027286/pk2421Isup2.hkl Additional supplementary materials: crystallographic information; 3D view; checkCIF report
Co2V2Se2O11F(000) = 512
Mr = 553.66Dx = 4.155 Mg m3
Monoclinic, P21/mMo Kα radiation, λ = 0.71073 Å
Hall symbol: -P 2ybCell parameters from 1387 reflections
a = 4.7913 (2) Åθ = 3.9–32.2°
b = 8.8680 (4) ŵ = 14.01 mm1
c = 10.6156 (5) ÅT = 292 K
β = 101.115 (5)°Block, red
V = 442.59 (3) Å30.05 × 0.03 × 0.02 mm
Z = 2
Oxford Diffraction Xcalibur Sapphire3 diffractometer1534 independent reflections
Radiation source: fine-focus sealed tube1023 reflections with I > 2σ(I)
Graphite monochromatorRint = 0.051
Detector resolution: 16.5 pixels mm-1θmax = 32.3°, θmin = 3.9°
ω scansh = −7→7
Absorption correction: analytical [CrysAlis RED (Oxford Diffraction, 2007), based on expressions derived by Clark & Reid (1995)]k = −11→12
Tmin = 0.659, Tmax = 0.756l = −15→13
4219 measured reflections
Refinement on F20 restraints
Least-squares matrix: fullPrimary atom site location: structure-invariant direct methods
R[F2 > 2σ(F2)] = 0.032Secondary atom site location: difference Fourier map
wR(F2) = 0.048w = 1/[σ2(Fo2) + (0.0114P)2] where P = (Fo2 + 2Fc2)/3
S = 0.76(Δ/σ)max = 0.001
1534 reflectionsΔρmax = 1.28 e Å3
85 parametersΔρmin = −0.98 e Å3
Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.
Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.
xyzUiso*/Ueq
Se10.38839 (12)0.25000.45047 (6)0.00668 (13)
Se20.14374 (12)0.25000.89926 (5)0.00653 (13)
Co10.95757 (12)0.42816 (6)0.63219 (5)0.00751 (13)
V10.53298 (15)0.56239 (8)0.85002 (6)0.00660 (15)
O10.6860 (8)0.25000.5658 (4)0.0105 (9)
O60.7568 (6)0.4597 (3)0.7887 (3)0.0118 (6)
O50.3738 (6)0.4001 (3)0.9523 (3)0.0107 (6)
O20.2107 (6)0.0989 (3)0.4958 (3)0.0093 (6)
O30.1701 (8)0.25000.7454 (4)0.0088 (9)
O40.2448 (6)0.5786 (3)0.7407 (3)0.0132 (7)
O70.6843 (8)0.75000.8501 (4)0.0077 (9)
U11U22U33U12U13U23
Se10.0068 (3)0.0069 (3)0.0064 (3)0.0000.0014 (2)0.000
Se20.0080 (3)0.0051 (3)0.0063 (3)0.0000.0008 (2)0.000
Co10.0080 (3)0.0063 (3)0.0082 (3)0.0001 (2)0.0016 (2)0.0001 (2)
V10.0078 (3)0.0063 (3)0.0058 (3)−0.0003 (3)0.0017 (3)0.0000 (3)
O10.008 (2)0.005 (2)0.017 (2)0.000−0.0012 (18)0.000
O60.0140 (16)0.0077 (15)0.0148 (16)0.0010 (12)0.0059 (13)−0.0014 (12)
O50.0153 (16)0.0113 (15)0.0045 (14)−0.0088 (12)−0.0003 (12)−0.0024 (11)
O20.0106 (15)0.0103 (16)0.0071 (15)−0.0021 (12)0.0021 (12)−0.0024 (11)
O30.012 (2)0.006 (2)0.007 (2)0.000−0.0022 (17)0.000
O40.0139 (16)0.0101 (16)0.0132 (16)−0.0020 (12)−0.0031 (13)0.0025 (12)
O70.009 (2)0.005 (2)0.010 (2)0.0000.0024 (17)0.000
Se1—O11.691 (4)Co1—O62.093 (3)
Se1—O21.706 (3)Co1—O4iv2.095 (3)
Se1—O2i1.706 (3)Co1—O3iv2.122 (3)
Se2—O31.663 (4)V1—O41.630 (3)
Se2—O51.750 (3)V1—O61.635 (3)
Se2—O5i1.750 (3)V1—O71.8147 (17)
Co1—O2ii2.074 (3)V1—O52.038 (3)
Co1—O12.081 (3)V1—O5v2.086 (3)
Co1—O2iii2.090 (3)
O1—Se1—O2101.12 (13)O2ii—Co1—O3iv91.59 (13)
O1—Se1—O2i101.12 (13)O1—Co1—O3iv80.04 (12)
O2—Se1—O2i103.52 (19)O2iii—Co1—O3iv172.01 (14)
O3—Se2—O598.85 (13)O6—Co1—O3iv83.90 (13)
O3—Se2—O5i98.85 (13)O4iv—Co1—O3iv88.29 (11)
O5—Se2—O5i98.97 (19)O4—V1—O6107.24 (15)
O2ii—Co1—O195.00 (14)O4—V1—O7101.71 (16)
O2ii—Co1—O2iii80.44 (12)O6—V1—O7102.62 (15)
O1—Co1—O2iii101.07 (12)O4—V1—O595.11 (13)
O2ii—Co1—O6171.78 (11)O6—V1—O599.22 (13)
O1—Co1—O690.99 (14)O7—V1—O5146.92 (14)
O2iii—Co1—O6103.94 (11)O4—V1—O5v133.61 (14)
O2ii—Co1—O4iv92.69 (12)O6—V1—O5v117.38 (13)
O1—Co1—O4iv166.17 (13)O7—V1—O5v81.09 (14)
O2iii—Co1—O4iv91.51 (11)O5—V1—O5v66.81 (12)
O6—Co1—O4iv80.34 (11)
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2.  A short history of SHELX.

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Journal:  Acta Crystallogr A       Date:  2007-12-21       Impact factor: 2.290

3.  ZnVSe2O7 and Cd6V2Se5O21: new d10 transition-metal selenites with V(IV) or V(V) cations.

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