Literature DB >> 22805566

Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hybrid.

V L Korenev1, I A Akimov, S V Zaitsev, V F Sapega, L Langer, D R Yakovlev, Yu A Danilov, M Bayer.   

Abstract

Integration of magnetism into semiconductor electronics would facilitate an all-in-one-chip computer. Ferromagnet/bulk semiconductor hybrids have been, so far, mainly considered as key devices to read out the ferromagnetism by means of spin injection. Here we demonstrate that a Mn-based ferromagnetic layer acts as an orientation-dependent separator for carrier spins confined in a semiconductor quantum well that is set apart from the ferromagnet by a barrier only a few nanometers thick. By this spin-separation effect, a non-equilibrium electron-spin polarization is accumulated in the quantum well due to spin-dependent electron transfer to the ferromagnet. The significant advance of this hybrid design is that the excellent optical properties of the quantum well are maintained. This opens up the possibility of optical readout of the ferromagnet's magnetization and control of the non-equilibrium spin polarization in non-magnetic quantum wells.

Mesh:

Year:  2012        PMID: 22805566     DOI: 10.1038/ncomms1957

Source DB:  PubMed          Journal:  Nat Commun        ISSN: 2041-1723            Impact factor:   14.919


  7 in total

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Journal:  Phys Rev Lett       Date:  1996-09-23       Impact factor: 9.161

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Journal:  Nature       Date:  2004-04-01       Impact factor: 49.962

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Authors:  Tomasz Dietl
Journal:  Nat Mater       Date:  2010-11-23       Impact factor: 43.841

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Journal:  Nature       Date:  2006-08-17       Impact factor: 49.962

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Journal:  Phys Rev B Condens Matter       Date:  1996-10-01

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Authors:  C Song; M Sperl; M Utz; M Ciorga; G Woltersdorf; D Schuh; D Bougeard; C H Back; D Weiss
Journal:  Phys Rev Lett       Date:  2011-07-26       Impact factor: 9.161

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Authors:  C Ciuti; J P McGuire; L J Sham
Journal:  Phys Rev Lett       Date:  2002-09-18       Impact factor: 9.161

  7 in total
  4 in total

1.  Optically controlled spin-polarization memory effect on Mn delta-doped heterostructures.

Authors:  M A G Balanta; M J S P Brasil; F Iikawa; Udson C Mendes; J A Brum; Yu A Danilov; M V Dorokhin; O V Vikhrova; B N Zvonkov
Journal:  Sci Rep       Date:  2016-04-15       Impact factor: 4.379

2.  Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics.

Authors:  Ding Zhong; Kyle L Seyler; Xiayu Linpeng; Ran Cheng; Nikhil Sivadas; Bevin Huang; Emma Schmidgall; Takashi Taniguchi; Kenji Watanabe; Michael A McGuire; Wang Yao; Di Xiao; Kai-Mei C Fu; Xiaodong Xu
Journal:  Sci Adv       Date:  2017-05-31       Impact factor: 14.136

3.  Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids.

Authors:  F C D Moraes; S Ullah; M A G Balanta; F Iikawa; Y A Danilov; M V Dorokhin; O V Vikhrova; B N Zvonkov; F G G Hernandez
Journal:  Sci Rep       Date:  2019-05-13       Impact factor: 4.379

4.  Low voltage control of exchange coupling in a ferromagnet-semiconductor quantum well hybrid structure.

Authors:  V L Korenev; I V Kalitukha; I A Akimov; V F Sapega; E A Zhukov; E Kirstein; O S Ken; D Kudlacik; G Karczewski; M Wiater; T Wojtowicz; N D Ilyinskaya; N M Lebedeva; T A Komissarova; Yu G Kusrayev; D R Yakovlev; M Bayer
Journal:  Nat Commun       Date:  2019-07-01       Impact factor: 14.919

  4 in total

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