Literature DB >> 22786689

Direct observation of charge transfer in solid electrolyte for electrochemical metallization memory.

Deok-Yong Cho1, Ilia Valov, Jan van den Hurk, Stefan Tappertzhofen, Rainer Waser.   

Abstract

X-ray absorption spectroscopy study on an electrochemical metallization cell of GeS(x) :Ag shows clear experimental evidence of chemical ionization of the active metal atoms (Ag) and consequent transfer of charge to the electrolyte (GeS(x) ). The valence electron density and its change upon the Ag intercalation are depicted schematically as transparent waves on the Ge-S bond structure in amorphous GeS(x) .
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Year:  2012        PMID: 22786689     DOI: 10.1002/adma.201201499

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  4 in total

1.  Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalities.

Authors:  Niloufar Raeis-Hosseini; Shaochuan Chen; Christos Papavassiliou; Ilia Valov
Journal:  RSC Adv       Date:  2022-05-11       Impact factor: 4.036

2.  Nanobatteries in redox-based resistive switches require extension of memristor theory.

Authors:  I Valov; E Linn; S Tappertzhofen; S Schmelzer; J van den Hurk; F Lentz; R Waser
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

3.  Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories.

Authors:  Deok-Yong Cho; Stefan Tappertzhofen; Rainer Waser; Ilia Valov
Journal:  Sci Rep       Date:  2013-01-30       Impact factor: 4.379

4.  Stability and its mechanism in Ag/CoOx/Ag interface-type resistive switching device.

Authors:  Jianbo Fu; Muxin Hua; Shilei Ding; Xuegang Chen; Rui Wu; Shunquan Liu; Jingzhi Han; Changsheng Wang; Honglin Du; Yingchang Yang; Jinbo Yang
Journal:  Sci Rep       Date:  2016-10-19       Impact factor: 4.379

  4 in total

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